Part Details for BD139 by Motorola Semiconductor Products
Results Overview of BD139 by Motorola Semiconductor Products
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BD139 Information
BD139 by Motorola Semiconductor Products is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BD139
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 80 |
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RFQ | ||
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Quest Components | POWER BIPOLAR TRANSISTOR, 1.5A I(C), 80V V(BR)CEO, 1-ELEMENT, NPN, SILICON, TO-126, PLASTIC/EPOXY, 3 PIN | 64 |
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$0.4320 / $0.9600 | Buy Now |
Part Details for BD139
BD139 CAD Models
BD139 Part Data Attributes
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BD139
Motorola Semiconductor Products
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Datasheet
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BD139
Motorola Semiconductor Products
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin, PLASTIC, CASE 77-08, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MOTOROLA INC | |
Package Description | PLASTIC, CASE 77-08, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Collector Current-Max (IC) | 1.5 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 25 | |
JEDEC-95 Code | TO-225AA | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | NPN | |
Power Dissipation Ambient-Max | 12.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON | |
VCEsat-Max | 0.5 V |