Datasheets
BD13810STU by:
Fairchild Semiconductor Corporation

PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL

Part Details for BD13810STU by Fairchild Semiconductor Corporation

Results Overview of BD13810STU by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BD13810STU Information

BD13810STU by Fairchild Semiconductor Corporation is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BD13810STU

Part # Distributor Description Stock Price Buy
DISTI # 2156-BD13810STU-ND
DigiKey TRANS PNP 60V 1.5A TO-126-3 Min Qty: 1068 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 3626
In Stock
  • 1,068 $0.2800
$0.2800 Buy Now
Rochester Electronics Power Bipolar Transistor, 1.5A, 60V, PNP, TO-126, Plastic/Epoxy, 3 Pin RoHS: Compliant Status: Obsolete Min Qty: 1 3686
  • 100 $0.2703
  • 500 $0.2433
  • 1,000 $0.2243
  • 10,000 $0.2000
  • 100,000 $0.1676
$0.1676 / $0.2703 Buy Now

Part Details for BD13810STU

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BD13810STU Part Data Attributes

BD13810STU Fairchild Semiconductor Corporation
Buy Now Datasheet
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BD13810STU Fairchild Semiconductor Corporation PNP Epitaxial Silicon Transistor, TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD), 1920/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-126
Pin Count 3
Manufacturer Package Code TO-126 (SOT32) UNIFIED DRAWING (TSTU, TSSTU, STANDARD)
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 1.5 A
Collector-Emitter Voltage-Max 60 V
Configuration SINGLE
DC Current Gain-Min (hFE) 63
JEDEC-95 Code TO-126
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type PNP
Power Dissipation-Max (Abs) 13 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 75 MHz

Alternate Parts for BD13810STU

This table gives cross-reference parts and alternative options found for BD13810STU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BD13810STU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BD13810STU onsemi $0.3229 1.5 A, 60 V PNP Bipolar Power Junctions Transistor, TO-126-3, 1920-TUBE BD13810STU vs BD13810STU
Part Number Manufacturer Composite Price Description Compare
MJE13070-DR6280 Intersil Corporation Check for Price 5A, 400V, NPN, Si, POWER TRANSISTOR, TO-220AB BD13810STU vs MJE13070-DR6280
2SC4107N-YA SANYO Electric Co Ltd Check for Price Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN BD13810STU vs 2SC4107N-YA
MJE3055TA Motorola Semiconductor Products Check for Price Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin BD13810STU vs MJE3055TA
BUH515FP STMicroelectronics Check for Price 8A, 700V, NPN, Si, POWER TRANSISTOR, TO-220FP, FULL PACK-3 BD13810STU vs BUH515FP
2N3172.MOD TT Electronics Power and Hybrid / Semelab Limited Check for Price 3A, 60V, PNP, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN BD13810STU vs 2N3172.MOD
BD500-6203 Harris Semiconductor Check for Price Power Bipolar Transistor, 5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin BD13810STU vs BD500-6203
MJE8502C Motorola Mobility LLC Check for Price 5A, 700V, NPN, Si, POWER TRANSISTOR, TO-220AB BD13810STU vs MJE8502C
MJE3055TWD Motorola Mobility LLC Check for Price 10A, 60V, NPN, Si, POWER TRANSISTOR, TO-220AB BD13810STU vs MJE3055TWD
BD500B-6265 Harris Semiconductor Check for Price Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin BD13810STU vs BD500B-6265
2SD1381F/PQ ROHM Semiconductor Check for Price Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126FP, 3 PIN BD13810STU vs 2SD1381F/PQ

BD13810STU Related Parts

BD13810STU Frequently Asked Questions (FAQ)

  • Fairchild recommends a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat. A minimum of 2oz copper thickness is recommended, and the thermal pad should be connected to a ground plane or a dedicated heat sink.

  • To ensure stable operation with a high-ESR output capacitor, Fairchild recommends adding a 1nF to 10nF ceramic capacitor in parallel with the output capacitor to reduce the effective ESR. Additionally, the output capacitor should be placed close to the IC to minimize parasitic inductance.

  • The maximum allowed voltage on the EN (enable) pin is 6V, which is higher than the recommended operating voltage of 5V. However, it's essential to ensure that the EN pin voltage does not exceed the supply voltage (VIN) to prevent damage to the IC.

  • The BD13810STU is rated for operation up to 125°C, but Fairchild recommends derating the output current and power dissipation at high temperatures to ensure reliable operation. A thermal analysis should be performed to ensure the IC does not exceed its maximum junction temperature.

  • The power dissipation of the BD13810STU can be calculated using the formula: Pd = (VIN x IIN) + (VOUT x IOUT) + (VIN x Iq), where IIN is the input current, IOUT is the output current, and Iq is the quiescent current. The calculated power dissipation should be within the recommended maximum power dissipation rating.

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