Part Details for BCX56E6327 by Infineon Technologies AG
Results Overview of BCX56E6327 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BCX56E6327 Information
BCX56E6327 by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BCX56E6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 23 | 1455 |
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$0.0675 / $0.2250 | Buy Now |
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ComSIT USA | Electronic Component RoHS: Not Compliant |
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RFQ |
Part Details for BCX56E6327
BCX56E6327 CAD Models
BCX56E6327 Part Data Attributes
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BCX56E6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BCX56E6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 1 A | |
Collector-Emitter Voltage-Max | 80 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 40 | |
JESD-30 Code | R-PSSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |
Alternate Parts for BCX56E6327
This table gives cross-reference parts and alternative options found for BCX56E6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCX56E6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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BCX56 | NXP Semiconductors | Check for Price | TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243, PLASTIC, SC-62, 3 PIN, BIP General Purpose Small Signal | BCX56E6327 vs BCX56 |
BCX56TRL13 | NXP Semiconductors | Check for Price | TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | BCX56E6327 vs BCX56TRL13 |
BCX56-16E6327 | Siemens | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | BCX56E6327 vs BCX56-16E6327 |
BCX56-16 | Zetex / Diodes Inc | Check for Price | TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal | BCX56E6327 vs BCX56-16 |
BCX56-T | NXP Semiconductors | Check for Price | TRANSISTOR 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243, SOT-89, 3 PIN, BIP General Purpose Small Signal | BCX56E6327 vs BCX56-T |
BCX56E6433 | Siemens | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | BCX56E6327 vs BCX56E6433 |
BCX5616TC | Zetex / Diodes Inc | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | BCX56E6327 vs BCX5616TC |
BCX56 | NEC Electronics America Inc | Check for Price | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, POWER, MINIMOLD PACKAGE-3 | BCX56E6327 vs BCX56 |
BCX56E6327 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a value between 1 ohm and 10 ohm. Consult Infineon's application notes and simulation tools to determine the optimal value for your design.
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The BCX56E6327 can withstand voltage stresses up to 1.5 times the maximum rated voltage (VCC) during startup or shutdown, but it's recommended to limit the voltage stress to 1.2 times VCC to ensure reliable operation.
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Follow Infineon's EMC guidelines, which include using a common-mode choke, decoupling capacitors, and a shielded layout. Additionally, consider using a metal shield or a Faraday cage to enclose the device and minimize radiated emissions.
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The BCX56E6327 is rated for operation from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance and reliability.