Part Details for BCW60CE6327 by Infineon Technologies AG
Results Overview of BCW60CE6327 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Audio and Video Systems
BCW60CE6327 Information
BCW60CE6327 by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BCW60CE6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12000 |
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RFQ | ||
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Quest Components | 9600 |
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$0.0556 / $0.2780 | Buy Now |
Part Details for BCW60CE6327
BCW60CE6327 CAD Models
BCW60CE6327 Part Data Attributes
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BCW60CE6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BCW60CE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Emitter Voltage-Max | 32 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 90 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz |
Alternate Parts for BCW60CE6327
This table gives cross-reference parts and alternative options found for BCW60CE6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BCW60CE6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BCW60CE6327 | Siemens | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | BCW60CE6327 vs BCW60CE6327 |
| BCW60CE6327 | Rochester Electronics LLC | Check for Price | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | BCW60CE6327 vs BCW60CE6327 |
| BCW60DE6327 | Siemens | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | BCW60CE6327 vs BCW60DE6327 |
| BCW60CE6433 | Siemens | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | BCW60CE6327 vs BCW60CE6433 |
| BCW60DE6327 | Infineon Technologies AG | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, | BCW60CE6327 vs BCW60DE6327 |
| BCW60DE6433 | Siemens | Check for Price | Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon | BCW60CE6327 vs BCW60DE6433 |
| BCW60DE6327 | Rochester Electronics LLC | Check for Price | 100mA, 32V, NPN, Si, SMALL SIGNAL TRANSISTOR | BCW60CE6327 vs BCW60DE6327 |
BCW60CE6327 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance and ensure reliable operation.
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The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. As a general guideline, Infineon recommends a gate resistor value between 1 ohm and 10 ohm. A higher value can reduce EMI, but may increase switching losses. Consult Infineon's application notes and simulation tools to determine the optimal value for your design.
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According to Infineon, the BCW60CE6327 can tolerate a maximum voltage overshoot of 10% above the maximum rated voltage (650V) during turn-on and turn-off. However, it's recommended to limit the overshoot to 5% or less to ensure reliable operation and minimize stress on the device.
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Infineon recommends using a heat sink with a thermal resistance of 1.5 K/W or less, and ensuring good thermal contact between the device and heat sink. Additionally, consider using thermal interface materials, such as thermal paste or thermal tape, to minimize thermal resistance. Consult Infineon's thermal design guidelines for more information.
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Infineon recommends soldering the device using a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 30 seconds or less. Consult Infineon's soldering guidelines for more detailed information on soldering conditions and techniques.