Datasheets
BCP56 by:

Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

Part Details for BCP56 by Galaxy Microelectronics

Results Overview of BCP56 by Galaxy Microelectronics

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BCP56 Information

BCP56 by Galaxy Microelectronics is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for BCP56

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BCP56 Part Data Attributes

BCP56 Galaxy Microelectronics
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BCP56 Galaxy Microelectronics Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Package Description SOT-223, 4 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection COLLECTOR
Collector Current-Max (IC) 1 A
Collector-Emitter Voltage-Max 80 V
Configuration SINGLE
DC Current Gain-Min (hFE) 40
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 1.5 W
Reference Standard MIL-STD-202
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100 MHz
VCEsat-Max 0.5 V

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