Part Details for BC856BWE6327 by Infineon Technologies AG
Results Overview of BC856BWE6327 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
BC856BWE6327 Information
BC856BWE6327 by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BC856BWE6327
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 45 | 5605 |
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$0.0113 / $0.1125 | Buy Now |
Part Details for BC856BWE6327
BC856BWE6327 CAD Models
BC856BWE6327 Part Data Attributes
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BC856BWE6327
Infineon Technologies AG
Buy Now
Datasheet
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BC856BWE6327
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-323, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | TR, 7 INCH: 3000 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 1.5 pF | |
| Collector-Emitter Voltage-Max | 65 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 220 | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.25 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.65 V |
BC856BWE6327 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The gate resistor value depends on the specific application, switching frequency, and gate drive voltage. A general guideline is to use a value between 1 ohm and 10 ohm. Consult Infineon's application notes and simulation tools to determine the optimal value for your design.
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The BC856BWE6327 can withstand voltage stresses up to 1.5 times the maximum rated voltage (VCC) during startup or shutdown, but it's recommended to limit the voltage stress to 1.2 times VCC to ensure reliable operation.
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Follow Infineon's EMC guidelines, which include using a common-mode choke, decoupling capacitors, and a shielded layout. Additionally, consider using a metal shield or a Faraday cage to enclose the device and minimize radiated emissions.
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The BC856BWE6327 is rated for operation from -40°C to 150°C, but the recommended operating temperature range is -20°C to 125°C for optimal performance and reliability.