Part Details for BC856BW by Galaxy Microelectronics
Results Overview of BC856BW by Galaxy Microelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
BC856BW Information
BC856BW by Galaxy Microelectronics is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BC856BW
BC856BW CAD Models
BC856BW Part Data Attributes
|
|
BC856BW
Galaxy Microelectronics
Buy Now
Datasheet
|
Compare Parts:
BC856BW
Galaxy Microelectronics
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, SOT-323, 3 PIN
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD | |
| Package Description | SOT-323, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Collector-Emitter Voltage-Max | 65 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 220 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | PNP | |
| Power Dissipation Ambient-Max | 0.2 W | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Reference Standard | MIL-STD-202; UL RECOGNIZED | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.65 V |