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BC856BMB - 60 V, 100 mA PNP general-purpose transistor@en-us DFN 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BC856BMBYL by Nexperia is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1727-2637-1-ND
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DigiKey | TRANS PNP 60V 0.1A DFN1006B-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
20400 In Stock |
|
$0.0236 / $0.2100 | Buy Now |
DISTI #
BC856BMBYL
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Avnet Americas | Trans GP BJT PNP 60V 0.1A 3-Pin SOT-883B T/R - Tape and Reel (Alt: BC856BMBYL) RoHS: Compliant Min Qty: 30000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0212 / $0.0232 | Buy Now |
DISTI #
771-BC856BMBYL
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Mouser Electronics | Bipolar Transistors - BJT 60 V, 100 mA PNP general-purpose transistor RoHS: Compliant | 18765 |
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$0.0240 / $0.2100 | Buy Now |
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Rochester Electronics | Small Signal Bipolar Transistor, 0.1A, 60V, PNP RoHS: Compliant Status: Active Min Qty: 1 | 13090 |
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$0.0172 / $0.0277 | Buy Now |
DISTI #
BC856BMBYL
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TTI | Bipolar Transistors - BJT 60 V, 100 mA PNP general-purpose transistor RoHS: Compliant pbFree: Pb-Free Min Qty: 30000 Package Multiple: 10000 Container: Reel | Americas - 0 |
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$0.0222 / $0.0236 | Buy Now |
DISTI #
BC856BMBYL
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Avnet Asia | Trans GP BJT PNP 60V 0.1A 3-Pin SOT-883B T/R (Alt: BC856BMBYL) RoHS: Compliant Min Qty: 30000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days | 0 |
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$0.0214 / $0.0239 | Buy Now |
DISTI #
BC856BMBYL
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Avnet Silica | Trans GP BJT PNP 60V 01A 3Pin SOT883B TR (Alt: BC856BMBYL) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
DISTI #
BC856BMBYL
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EBV Elektronik | Trans GP BJT PNP 60V 01A 3Pin SOT883B TR (Alt: BC856BMBYL) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days | EBV - 0 |
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Buy Now |
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BC856BMBYL
Nexperia
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Datasheet
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BC856BMBYL
Nexperia
BC856BMB - 60 V, 100 mA PNP general-purpose transistor@en-us DFN 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Package Description | DFN1006B-3, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT883B | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
Case Connection | COLLECTOR | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 60 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 220 | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | PNP | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz |
The maximum operating temperature range for the BC856BMLYL is -55°C to 150°C.
To ensure reliability, follow the recommended derating curves for power dissipation, and consider using a heat sink or thermal interface material to maintain a safe junction temperature.
The recommended storage temperature range for the BC856BMBYL is -55°C to 150°C, with a relative humidity of 60% or less.
Yes, the BC856BMBYL can be used in switching applications, but ensure that the transistor is properly biased and that the switching frequency is within the recommended range to avoid overheating.
To prevent EOS damage, ensure that the transistor is handled and stored in an electrostatic discharge (ESD)-protected environment, and follow proper assembly and soldering procedures.