Part Details for BC856BE6327HTSA1 by Infineon Technologies AG
Results Overview of BC856BE6327HTSA1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Telecommunications
BC856BE6327HTSA1 Information
BC856BE6327HTSA1 by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BC856BE6327HTSA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP000012935
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EBV Elektronik | Trans GP BJT PNP 65V 01A 3Pin SOT23 TR (Alt: SP000012935) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for BC856BE6327HTSA1
BC856BE6327HTSA1 CAD Models
BC856BE6327HTSA1 Part Data Attributes
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BC856BE6327HTSA1
Infineon Technologies AG
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Datasheet
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BC856BE6327HTSA1
Infineon Technologies AG
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | TR, 7 INCH: 3000 | |
| Collector Current-Max (IC) | 0.1 A | |
| Collector-Base Capacitance-Max | 1.5 pF | |
| Collector-Emitter Voltage-Max | 65 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 220 | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | PNP | |
| Power Dissipation-Max (Abs) | 0.33 W | |
| Qualification Status | Not Qualified | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 250 MHz | |
| VCEsat-Max | 0.65 V |
BC856BE6327HTSA1 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the BC856BE6327HTSA1 in their application note AN2013-01. It suggests a thermal pad design with a minimum size of 10mm x 10mm, and a thermal via array with a minimum of 10 vias to ensure efficient heat dissipation.
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Infineon recommends following the soldering guidelines outlined in their application note AN2013-02. This includes using a soldering temperature profile with a peak temperature of 260°C, and ensuring the device is properly aligned and secured during the soldering process.
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While the datasheet provides the absolute maximum ratings, the recommended operating conditions for the BC856BE6327HTSA1 are typically specified in the application notes or design guides provided by Infineon. For this device, the recommended operating voltage is 12V, and the recommended operating current is 10A.
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Infineon recommends following standard ESD protection procedures when handling the BC856BE6327HTSA1, such as using an ESD wrist strap, ESD mat, or ESD bag. Additionally, the device should be stored in a conductive bag or container to prevent ESD damage during transportation and storage.
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The thermal resistance values for the BC856BE6327HTSA1 are typically provided in the datasheet or application notes. For this device, the thermal resistance values are RthJA = 2.5K/W and RthJC = 1.2K/W. To calculate the junction temperature, you can use the formula TJ = TA + (PD x RthJA), where TJ is the junction temperature, TA is the ambient temperature, PD is the power dissipation, and RthJA is the thermal resistance from junction to ambient.