Part Details for BC847BW-13-F by Diodes Incorporated
Results Overview of BC847BW-13-F by Diodes Incorporated
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BC847BW-13-F Information
BC847BW-13-F by Diodes Incorporated is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BC847BW-13-F
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BC847BW-13-F
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Avnet Silica | SOT3233NPN SMALL SIGNAL TRANSISTOR (Alt: BC847BW-13-F) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 38 Weeks, 0 Days | Silica - 0 |
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Part Details for BC847BW-13-F
BC847BW-13-F CAD Models
BC847BW-13-F Part Data Attributes
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BC847BW-13-F
Diodes Incorporated
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Datasheet
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BC847BW-13-F
Diodes Incorporated
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Diodes Incorporated | |
Additional Feature | HIGH RELIABILITY | |
Collector Current-Max (IC) | 0.1 A | |
Collector-Emitter Voltage-Max | 45 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 200 | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.2 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 300 MHz |