Datasheets
BC817K-40E6327 by: Infineon Technologies AG

Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3

Part Details for BC817K-40E6327 by Infineon Technologies AG

Results Overview of BC817K-40E6327 by Infineon Technologies AG

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BC817K-40E6327 Information

BC817K-40E6327 by Infineon Technologies AG is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BC817K-40E6327

Part # Distributor Description Stock Price Buy
Quest Components 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 2400
  • 1 $0.2630
  • 49 $0.1184
  • 423 $0.0789
$0.0789 / $0.2630 Buy Now
Quest Components 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR 482
  • 1 $0.1052
  • 49 $0.0789
  • 128 $0.0658
$0.0658 / $0.1052 Buy Now
Chip 1 Exchange INSTOCK 3000
RFQ

Part Details for BC817K-40E6327

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BC817K-40E6327 Part Data Attributes

BC817K-40E6327 Infineon Technologies AG
Buy Now Datasheet
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BC817K-40E6327 Infineon Technologies AG Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 45 V
Configuration SINGLE
DC Current Gain-Min (hFE) 250
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.5 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 170 MHz

BC817K-40E6327 Related Parts

BC817K-40E6327 Frequently Asked Questions (FAQ)

  • Infineon recommends a PCB layout with a large copper area connected to the drain pin (pin 3) to dissipate heat efficiently. A thermal via or a thermal pad can also be used to improve heat dissipation.

  • To ensure proper biasing, make sure to provide a stable voltage supply to the gate pin (pin 1) and a suitable resistor value for the gate-source voltage (Vgs). A recommended value for Rgs is between 1 kΩ to 10 kΩ.

  • The maximum allowed power dissipation for the BC817K-40E6327 is 125 W. However, this value can be derated based on the operating temperature and PCB layout.

  • While the BC817K-40E6327 is suitable for high-frequency applications, its performance may degrade above 100 kHz. For frequencies above 100 kHz, consider using a device with a lower gate charge and a faster switching time.

  • To protect the device from ESD, handle the device by the body or use an ESD wrist strap. Ensure that the PCB design includes ESD protection components, such as TVS diodes or ESD protection arrays, to prevent damage from static electricity.

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