Part Details for BC817-25-Q by Nexperia
Results Overview of BC817-25-Q by Nexperia
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BC817-25-Q Information
BC817-25-Q by Nexperia is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for BC817-25-Q
| Part # | Distributor | Description | Stock | Price | Buy | |
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Cytech Systems Limited | 1000 |
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RFQ |
Part Details for BC817-25-Q
BC817-25-Q CAD Models
BC817-25-Q Part Data Attributes
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BC817-25-Q
Nexperia
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Datasheet
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BC817-25-Q
Nexperia
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | SOT-23, 3 PIN | |
| Reach Compliance Code | compliant | |
| Collector Current-Max (IC) | 0.5 A | |
| Collector-Emitter Voltage-Max | 45 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 160 | |
| JEDEC-95 Code | TO-236AB | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | NPN | |
| Power Dissipation-Max (Abs) | 0.345 W | |
| Reference Standard | AEC-Q101; IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| VCEsat-Max | 0.7 V |