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BC807-40QA - 45 V, 500 mA PNP general-purpose transistor@en-us DFN 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BC807-40QAZ by Nexperia is a Small Signal Bipolar Transistor.
Small Signal Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
3439602
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Farnell | TRANS, BIPOLAR, PNP, 45V, 0.5A, DFN1010D RoHS: Compliant Min Qty: 5000 Lead time: 9 Weeks, 1 Days Container: Cut Tape | 9 |
|
$0.0282 | Buy Now |
DISTI #
3439602RL
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Farnell | TRANS, BIPOLAR, PNP, 45V, 0.5A, DFN1010D RoHS: Compliant Min Qty: 5000 Lead time: 9 Weeks, 1 Days Container: Reel | 9 |
|
$0.0282 | Buy Now |
DISTI #
1727-2242-1-ND
|
DigiKey | TRANS PNP 45V 0.5A DFN1010D-3 Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
29023 In Stock |
|
$0.0290 / $0.2500 | Buy Now |
DISTI #
BC807-40QAZ
|
Avnet Americas | Trans GP BJT PNP 45V 0.5A 3-Pin DFN - Tape and Reel (Alt: BC807-40QAZ) RoHS: Compliant Min Qty: 25000 Package Multiple: 5000 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
|
$0.0235 / $0.0258 | Buy Now |
DISTI #
771-BC807-40QAZ
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Mouser Electronics | Bipolar Transistors - BJT 45 V, 500 mA PNP general-purpose transistors RoHS: Compliant | 14254 |
|
$0.0320 / $0.2300 | Buy Now |
DISTI #
V36:1790_06513655
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Arrow Electronics | Trans GP BJT PNP 45V 0.5A 900mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 8 Weeks Date Code: 2328 | Americas - 20000 |
|
Buy Now | |
DISTI #
V72:2272_06513655
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Arrow Electronics | Trans GP BJT PNP 45V 0.5A 900mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 3546 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2209 Container: Cut Strips | Americas - 12779 |
|
$0.0259 / $0.0282 | Buy Now |
DISTI #
85969159
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Verical | Trans GP BJT PNP 45V 0.5A 900mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 9741 Package Multiple: 1 Date Code: 2101 | Americas - 70000 |
|
$0.0385 | Buy Now |
DISTI #
71284924
|
Verical | Trans GP BJT PNP 45V 0.5A 900mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Date Code: 2328 | Americas - 20000 |
|
$0.0118 | Buy Now |
DISTI #
85965295
|
Verical | Trans GP BJT PNP 45V 0.5A 900mW 3-Pin DFN-D EP T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 9741 Package Multiple: 1 Date Code: 2201 | Americas - 15000 |
|
$0.0385 | Buy Now |
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BC807-40QAZ
Nexperia
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Datasheet
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BC807-40QAZ
Nexperia
BC807-40QA - 45 V, 500 mA PNP general-purpose transistor@en-us DFN 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT1215 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Nexperia | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Peak Reflow Temperature (Cel) | 260 | |
Reference Standard | AEC-Q101 | |
Terminal Finish | TIN | |
Time@Peak Reflow Temperature-Max (s) | 30 |
The maximum operating temperature range for the BC807-40QAZ is -40°C to 150°C.
To ensure stability, it's recommended to use a resistor-capacitor (RC) network in the base circuit to prevent oscillations, and to keep the lead length of the transistor as short as possible.
The recommended storage temperature range for the BC807-40QAZ is -40°C to 30°C.
Yes, the BC807-40QAZ can be used in switching applications, but it's essential to ensure that the transistor is properly biased and that the switching frequency is within the recommended range.
To handle ESD protection, it's recommended to use an ESD protection device, such as a TVS diode, in parallel with the transistor, and to follow proper handling and storage procedures to prevent ESD damage.