Part Details for BC108B by Freescale Semiconductor
Results Overview of BC108B by Freescale Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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BC108B Information
BC108B by Freescale Semiconductor is an Other Transistor.
Other Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for BC108B
BC108B CAD Models
BC108B Part Data Attributes
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BC108B
Freescale Semiconductor
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Datasheet
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BC108B
Freescale Semiconductor
TRANSISTOR,BJT,NPN,25V V(BR)CEO,200MA I(C),TO-18
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MOTOROLA SEMICONDUCTOR PRODUCTS | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Reach Compliance Code | unknown | |
| Collector Current-Max (IC) | 0.2 A | |
| Collector-Base Capacitance-Max | 4.5 pF | |
| Collector-Emitter Voltage-Max | 25 V | |
| Configuration | Single | |
| DC Current Gain-Min (hFE) | 200 | |
| JEDEC-95 Code | TO-206AA | |
| JESD-30 Code | O-MBCY-W3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1 W | |
| Power Dissipation-Max (Abs) | 0.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 150 MHz | |
| VCEsat-Max | 0.6 V |