Part Details for BAW56,235 by NXP Semiconductors
Results Overview of BAW56,235 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BAW56,235 Information
BAW56,235 by NXP Semiconductors is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.
A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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TBAW56 | Toshiba Electronic Devices & Storage Corporation | Switching Diode, 80 V, 0.215 A, SOT23 |
Price & Stock for BAW56,235
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Diodes | 191354 |
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RFQ |
Part Details for BAW56,235
BAW56,235 CAD Models
BAW56,235 Part Data Attributes
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BAW56,235
NXP Semiconductors
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Datasheet
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BAW56,235
NXP Semiconductors
BAV756S; BAW56 series - High-speed switching diodes TO-236 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | TO-236 | |
Package Description | PLASTIC, SMD, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.70 | |
Configuration | COMMON ANODE, 2 ELEMENTS | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.25 V | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Non-rep Pk Forward Current-Max | 4 A | |
Number of Elements | 2 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 150 °C | |
Output Current-Max | 0.215 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Power Dissipation-Max | 0.25 W | |
Qualification Status | Not Qualified | |
Rep Pk Reverse Voltage-Max | 90 V | |
Reverse Current-Max | 1 µA | |
Reverse Recovery Time-Max | 0.004 µs | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 |
Alternate Parts for BAW56,235
This table gives cross-reference parts and alternative options found for BAW56,235. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BAW56,235, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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BAW56/T3 | NXP Semiconductors | Check for Price | 0.215A, 90V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN | BAW56,235 vs BAW56/T3 |
933098990185 | Nexperia | Check for Price | Rectifier Diode | BAW56,235 vs 933098990185 |
BAW56T/R | Philips Semiconductors | Check for Price | Rectifier Diode, 0.215A, 85V V(RRM), | BAW56,235 vs BAW56T/R |
BAW56,235 Frequently Asked Questions (FAQ)
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A symmetrical layout with a ground plane underneath the device is recommended. Keep the leads as short as possible and avoid vias under the device to minimize parasitic inductance.
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Follow the recommended derating curves for temperature and current. Ensure good thermal conductivity between the device and the PCB, and consider using a heat sink if necessary.
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The maximum allowable voltage is 250 V, but it's recommended to operate within the specified maximum repetitive peak voltage (Vdrm) of 200 V to ensure reliable operation.
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Yes, but be aware that the device is not optimized for high-frequency switching. The switching frequency should be limited to 100 kHz or less to avoid excessive power losses.
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Follow proper ESD handling procedures during assembly and storage. Consider adding external ESD protection devices, such as TVS diodes, to protect the device from electrostatic discharge.