Datasheets
BAV99T/R by:

0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3

Part Details for BAV99T/R by NXP Semiconductors

Results Overview of BAV99T/R by NXP Semiconductors

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

BAV99T/R Information

BAV99T/R by NXP Semiconductors is a Rectifier Diode.
Rectifier Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for BAV99T/R

Part # Distributor Description Stock Price Buy
DISTI # 70012316
RS Diode, Rectifier, High, Vr 100V, If 125mA, Pkg SOT-23,Config Dual Series, Vf 1.25V Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.0200
$0.0200 RFQ
Quest Components 0.215 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB 1274
  • 1 $0.0480
  • 105 $0.0360
  • 279 $0.0300
$0.0300 / $0.0480 Buy Now

Part Details for BAV99T/R

BAV99T/R CAD Models

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BAV99T/R Part Data Attributes

BAV99T/R NXP Semiconductors
Buy Now Datasheet
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BAV99T/R NXP Semiconductors 0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code SOT-23
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.70
Application GENERAL PURPOSE
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.25 V
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 4 A
Number of Elements 2
Number of Terminals 3
Operating Temperature-Max 150 °C
Operating Temperature-Min -65 °C
Output Current-Max 0.215 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Power Dissipation-Max 0.25 W
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 100 V
Reverse Current-Max 0.5 µA
Reverse Recovery Time-Max 0.004 µs
Reverse Test Voltage 80 V
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40

Alternate Parts for BAV99T/R

This table gives cross-reference parts and alternative options found for BAV99T/R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BAV99T/R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BAV99,215 Nexperia $0.0174 BAV99 - High-speed switching diode@en-us TO-236 3-Pin BAV99T/R vs BAV99,215
BAV99/TE1 Nexperia Check for Price Rectifier Diode BAV99T/R vs BAV99/TE1
BAV99T/R Philips Semiconductors Check for Price Rectifier Diode, 0.1A, 70V V(RRM), BAV99T/R vs BAV99T/R
Part Number Manufacturer Composite Price Description Compare
BAV99/8,215 Nexperia Check for Price Rectifier Diode, 1 Phase, 2 Element, 0.215A, 100V V(RRM), Silicon, TO-236AB BAV99T/R vs BAV99/8,215
BAV99 Nexperia Check for Price Rectifier Diode, 2 Element, 0.215A, 100V V(RRM), Silicon, TO-236AB BAV99T/R vs BAV99
BAV99/B Nexperia Check for Price Rectifier Diode BAV99T/R vs BAV99/B
BAV99/T3 NXP Semiconductors Check for Price 0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 BAV99T/R vs BAV99/T3
933215370215 NXP Semiconductors Check for Price 0.215A, 85V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC, SMD, 3 PIN BAV99T/R vs 933215370215
BAV99-T NXP Semiconductors Check for Price 0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 BAV99T/R vs BAV99-T
BAV99/T4 NXP Semiconductors Check for Price 0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 BAV99T/R vs BAV99/T4
BAV99212 NXP Semiconductors Check for Price 0.215A, 85V, 2 ELEMENT, SILICON, SIGNAL DIODE BAV99T/R vs BAV99212
BAV99 NXP Semiconductors Check for Price 0.215A, 100V, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB, PLASTIC PACKAGE-3 BAV99T/R vs BAV99
BAV99/TE1R Nexperia Check for Price BAV99 - High-speed switching diode@en-us TO-236 3-Pin BAV99T/R vs BAV99/TE1R

BAV99T/R Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for BAV99T/R is -40°C to 125°C, although it can withstand storage temperatures from -55°C to 150°C.

  • To ensure reliability in high-temperature applications, it's essential to follow proper derating guidelines, use a suitable thermal management system, and consider the device's power dissipation and thermal resistance.

  • Yes, BAV99T/R can be used in switching applications, but it's essential to consider the device's switching characteristics, such as transition time, and ensure that the switching frequency is within the recommended range.

  • To handle ESD protection, follow proper handling and storage procedures, use ESD-protected workstations and tools, and consider adding external ESD protection devices if necessary.

  • BAV99T/R is commonly used in low-power, low-voltage applications such as audio circuits, digital circuits, and power supplies, as well as in automotive, industrial, and consumer electronics.

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