Datasheets
BAS40T1HB4SA1 by: Infineon Technologies AG

Mixer Diode,

Part Details for BAS40T1HB4SA1 by Infineon Technologies AG

Results Overview of BAS40T1HB4SA1 by Infineon Technologies AG

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BAS40T1HB4SA1 Information

BAS40T1HB4SA1 by Infineon Technologies AG is a Microwave Mixer Diode.
Microwave Mixer Diodes are under the broader part category of Diodes.

A diode is a electrical part that can control the direction in which the current flows in a device. Consider factors like voltage drop, current capacity, reverse voltage, and operating frequency when selecting a diode. Read more about Diodes on our Diodes part category page.

Price & Stock for BAS40T1HB4SA1

Part # Distributor Description Stock Price Buy
DISTI # BAS40T1HB4SA1
Avnet Americas - Gel-pak, waffle pack, wafer, diced wafer on film (Alt: BAS40T1HB4SA1) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Waffle Pack 0
RFQ

Part Details for BAS40T1HB4SA1

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BAS40T1HB4SA1 Part Data Attributes

BAS40T1HB4SA1 Infineon Technologies AG
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BAS40T1HB4SA1 Infineon Technologies AG Mixer Diode,
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.70
Factory Lead Time 111 Weeks
Additional Feature HIGH RELIABILITY, PD-CASE
Application GENERAL PURPOSE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.85 V
JESD-30 Code O-CXMW-G2
Non-rep Pk Forward Current-Max 0.17 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Output Current-Max 0.12 A
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style MICROWAVE
Power Dissipation-Max 0.25 W
Rep Pk Reverse Voltage-Max 40 V
Reverse Current-Max 10 µA
Reverse Test Voltage 40 V
Surface Mount YES
Technology SCHOTTKY
Terminal Form GULL WING
Terminal Position UNSPECIFIED

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