Part Details for AUIRGP50B60PD1 by Infineon Technologies AG
Results Overview of AUIRGP50B60PD1 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRGP50B60PD1 Information
AUIRGP50B60PD1 by Infineon Technologies AG is an IGBT.
IGBTs are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRGP50B60PD1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001511310
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EBV Elektronik | Trans IGBT Chip NCH 600V 75A 3Pin3Tab TO247AC Tube (Alt: SP001511310) RoHS: Compliant Min Qty: 25 Package Multiple: 25 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for AUIRGP50B60PD1
AUIRGP50B60PD1 CAD Models
AUIRGP50B60PD1 Part Data Attributes
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AUIRGP50B60PD1
Infineon Technologies AG
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Datasheet
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AUIRGP50B60PD1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247AC, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Collector Current-Max (IC) | 60 A | |
| Collector-Emitter Voltage-Max | 600 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Fall Time-Max (tf) | 15 ns | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 390 W | |
| Qualification Status | Not Qualified | |
| Rise Time-Max (tr) | 15 ns | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 161 ns | |
| Turn-on Time-Nom (ton) | 39 ns |
Alternate Parts for AUIRGP50B60PD1
This table gives cross-reference parts and alternative options found for AUIRGP50B60PD1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRGP50B60PD1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRGP50B60PD1-EPBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN | AUIRGP50B60PD1 vs IRGP50B60PD1-EPBF |
| IRGP50B60PD1-EP | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | AUIRGP50B60PD1 vs IRGP50B60PD1-EP |
| IRGP50B60PD1PBF | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | AUIRGP50B60PD1 vs IRGP50B60PD1PBF |
| IRGP50B60PD1-EP | International Rectifier | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AD, LEAD FREE PACKAGE-3 | AUIRGP50B60PD1 vs IRGP50B60PD1-EP |
| IRGP50B60PD1PBF | Infineon Technologies AG | Check for Price | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247AC, LEAD FREE PACKAGE-3 | AUIRGP50B60PD1 vs IRGP50B60PD1PBF |
AUIRGP50B60PD1 Frequently Asked Questions (FAQ)
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The maximum junction temperature for the AUIRGP50B60PD1 is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
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Proper cooling is crucial for the AUIRGP50B60PD1. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material if necessary. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 250W.
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The recommended gate resistor value for the AUIRGP50B60PD1 is between 10Ω and 20Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
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Yes, the AUIRGP50B60PD1 is suitable for high-reliability applications. Infineon Technologies AG has qualified the device according to the AEC-Q101 standard, which ensures its suitability for automotive and other high-reliability applications.
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To protect the AUIRGP50B60PD1 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. The device has a built-in overvoltage protection, but additional external protection may be necessary depending on the application.