Part Details for AUIRFZ24NS by International Rectifier
Results Overview of AUIRFZ24NS by International Rectifier
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
AUIRFZ24NS Information
AUIRFZ24NS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFZ24NS
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 40 |
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$1.7250 / $2.7600 | Buy Now | |
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Rochester Electronics | 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 26115 |
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$0.8568 / $1.3800 | Buy Now |
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ComSIT USA | AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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Vyrian | Transistors | 10889 |
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RFQ |
Part Details for AUIRFZ24NS
AUIRFZ24NS CAD Models
AUIRFZ24NS Part Data Attributes
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AUIRFZ24NS
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRFZ24NS
International Rectifier
Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 71 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 17 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 45 W | |
| Pulsed Drain Current-Max (IDM) | 68 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRFZ24NS
This table gives cross-reference parts and alternative options found for AUIRFZ24NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFZ24NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFZ24NSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRFZ24NS vs AUIRFZ24NSTRL |
AUIRFZ24NS Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the AUIRFZ24NS is 175°C. Exceeding this temperature can lead to device failure or reduced lifespan.
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Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material with a thermal conductivity of at least 1 W/m-K.
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The recommended gate drive voltage for the AUIRFZ24NS is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power losses.
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Yes, the AUIRFZ24NS is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation.
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Overvoltage protection can be achieved using a voltage clamp or a zener diode. Overcurrent protection can be achieved using a current sense resistor and a comparator or a dedicated overcurrent protection IC.