Part Details for AUIRFSL4310 by Infineon Technologies AG
Results Overview of AUIRFSL4310 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AUIRFSL4310 Information
AUIRFSL4310 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFSL4310
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SP001516116
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EBV Elektronik | Trans MOSFET NCH 100V 130A 3Pin3Tab TO262 Tube (Alt: SP001516116) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Part Details for AUIRFSL4310
AUIRFSL4310 CAD Models
AUIRFSL4310 Part Data Attributes
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AUIRFSL4310
Infineon Technologies AG
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Datasheet
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AUIRFSL4310
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 980 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.007 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 550 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
AUIRFSL4310 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the AUIRFSL4310 in their application note AN2014-01. It includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The AUIRFSL4310 requires a gate driver that can provide a minimum of 4A peak current and 10V gate voltage. Infineon recommends using their own EiceDRIVER gate driver ICs, such as the 1EDI60N12AF, which are specifically designed to work with the AUIRFSL4310.
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The maximum allowed junction temperature for the AUIRFSL4310 is 175°C. However, it's recommended to keep the junction temperature below 150°C for optimal reliability and performance.
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Yes, the AUIRFSL4310 can be used in a half-bridge configuration. However, it's essential to ensure that the device is properly biased and that the gate driver is capable of providing the required voltage and current.
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Infineon provides a troubleshooting guide for the AUIRFSL4310 in their application note AN2014-02. It includes steps for identifying and resolving common issues, such as overheating, malfunction, and electrical overstress.