Part Details for AUIRFS8409TRL by International Rectifier
Results Overview of AUIRFS8409TRL by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Security and Surveillance
Audio and Video Systems
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
AUIRFS8409TRL Information
AUIRFS8409TRL by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFS8409TRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 195A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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Vyrian | Transistors | 2503 |
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RFQ |
Part Details for AUIRFS8409TRL
AUIRFS8409TRL CAD Models
AUIRFS8409TRL Part Data Attributes
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AUIRFS8409TRL
International Rectifier
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Datasheet
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AUIRFS8409TRL
International Rectifier
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | D2PAK-3/2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 760 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 195 A | |
| Drain-source On Resistance-Max | 0.0012 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 1460 pF | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 375 W | |
| Pulsed Drain Current-Max (IDM) | 1524 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |