Part Details for AUIRFS8408-7P by International Rectifier
Results Overview of AUIRFS8408-7P by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRFS8408-7P Information
AUIRFS8408-7P by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFS8408-7P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
|
Vyrian | Transistors | 8642 |
|
RFQ |
Part Details for AUIRFS8408-7P
AUIRFS8408-7P CAD Models
AUIRFS8408-7P Part Data Attributes
|
|
AUIRFS8408-7P
International Rectifier
Buy Now
Datasheet
|
Compare Parts:
AUIRFS8408-7P
International Rectifier
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 240 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 175 °C | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 294 W | |
| Surface Mount | YES |
AUIRFS8408-7P Frequently Asked Questions (FAQ)
-
The maximum junction temperature of AUIRFS8408-7P is 150°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
-
To calculate the power dissipation of AUIRFS8408-7P, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
-
The recommended gate drive voltage for AUIRFS8408-7P is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions. It's recommended to consult the datasheet and application notes for more information.
-
Yes, AUIRFS8408-7P is suitable for high-frequency switching applications up to 1MHz. However, the device's performance and reliability may degrade at higher frequencies. It's recommended to consult the datasheet and application notes for more information on high-frequency operation.
-
To ensure the reliability of AUIRFS8408-7P in a high-temperature environment, it's recommended to follow proper thermal management practices, such as using a heat sink, ensuring good airflow, and avoiding thermal hotspots. Additionally, it's recommended to derate the device's power handling capability at higher temperatures to prevent overheating.