Part Details for AUIRFS3806 by Infineon Technologies AG
Results Overview of AUIRFS3806 by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AUIRFS3806 Information
AUIRFS3806 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFS3806
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85965889
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Verical | Trans MOSFET N-CH Si 60V 43A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube Min Qty: 273 Package Multiple: 1 Date Code: 1601 | Americas - 676 |
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$0.8489 / $1.3750 | Buy Now |
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Rochester Electronics | AUIRFS3806 - 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 676 |
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$0.6791 / $1.1000 | Buy Now |
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DISTI #
SP001518108
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EBV Elektronik | Trans MOSFET NCH 60V 43A 3Pin2Tab D2PAK Tube (Alt: SP001518108) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRFS3806
AUIRFS3806 CAD Models
AUIRFS3806 Part Data Attributes
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AUIRFS3806
Infineon Technologies AG
Buy Now
Datasheet
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AUIRFS3806
Infineon Technologies AG
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 73 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 43 A | |
| Drain-source On Resistance-Max | 0.0158 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 71 W | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
AUIRFS3806 Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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Infineon recommends using a gate driver with a minimum output current of 2A and a voltage rating that matches the VGS of the AUIRFS3806. Additionally, consider the driver's rise and fall times, propagation delay, and input voltage range to ensure compatibility.
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According to Infineon's application note AN2013-03, the maximum allowed voltage overshoot on VDS during switching is 10% of the maximum rated VDS, which is 600V for the AUIRFS3806.
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To ensure reliable operation in high-temperature environments, follow Infineon's guidelines for thermal management, including using a heat sink, thermal interface material, and ensuring good airflow. Also, consider derating the device's power rating according to the temperature derating curve in the datasheet.
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Infineon recommends following standard ESD protection measures, including using ESD-sensitive handling and storage procedures, implementing ESD protection circuits in the PCB design, and using ESD-protected devices in the surrounding circuitry.