Part Details for AUIRFS3607TRL by Infineon Technologies AG
Results Overview of AUIRFS3607TRL by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AUIRFS3607TRL Information
AUIRFS3607TRL by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for AUIRFS3607TRL
AUIRFS3607TRL CAD Models
AUIRFS3607TRL Part Data Attributes
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AUIRFS3607TRL
Infineon Technologies AG
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Datasheet
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AUIRFS3607TRL
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 80 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 310 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRFS3607TRL
This table gives cross-reference parts and alternative options found for AUIRFS3607TRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFS3607TRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
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| IRFS3607TRLPBF | Infineon Technologies AG | $1.0588 | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRFS3607TRL vs IRFS3607TRLPBF |
| FDB088N08 | onsemi | $1.6092 | N-Channel PowerTrench® MOSFET 75V, 85A, 8.8mΩ, D2PAK-3 / TO-263-2, 800-REEL | AUIRFS3607TRL vs FDB088N08 |
| IRFS3607PBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRFS3607TRL vs IRFS3607PBF |
AUIRFS3607TRL Frequently Asked Questions (FAQ)
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Infineon provides a dedicated application note (AN2014-01) that outlines the recommended PCB layout and thermal management guidelines for the AUIRFS3607TRL. It's essential to follow these guidelines to ensure optimal performance, reliability, and thermal dissipation.
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Infineon recommends using a gate driver with a high current capability (e.g., 2A or higher) and a low propagation delay (e.g., <10ns) to ensure proper switching and minimize losses. The 2EDF7275F or 2EDF7276F gate drivers from Infineon are suitable options for the AUIRFS3607TRL.
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Although not explicitly stated in the datasheet, Infineon recommends limiting the voltage overshoot to <10% of the DC-link voltage to prevent damage to the device. This can be achieved by using a suitable snubber circuit or a voltage clamp.
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Infineon provides guidelines for EMC design in their application note (AN2013-03). It's essential to follow these guidelines, which include proper PCB layout, shielding, and filtering, to ensure compliance with EMC standards and regulations.
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Although the datasheet doesn't specify a specific frequency range, the AUIRFS3607TRL is typically used in applications with switching frequencies between 10 kHz to 100 kHz. However, the device can operate at higher frequencies with proper design and layout considerations.