Part Details for AUIRFR9024NTRL by International Rectifier
Results Overview of AUIRFR9024NTRL by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (6 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRFR9024NTRL Information
AUIRFR9024NTRL by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRFR9024NTRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 2827 |
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RFQ |
Part Details for AUIRFR9024NTRL
AUIRFR9024NTRL CAD Models
AUIRFR9024NTRL Part Data Attributes
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AUIRFR9024NTRL
International Rectifier
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Datasheet
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AUIRFR9024NTRL
International Rectifier
Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | ROHS COMPLIANT, PLASTIC, DPAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 62 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.175 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 38 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRFR9024NTRL
This table gives cross-reference parts and alternative options found for AUIRFR9024NTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRFR9024NTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR9024NTRLPBF | Infineon Technologies AG | $0.6321 | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | AUIRFR9024NTRL vs IRFR9024NTRLPBF |
| AUIRFR9024NTR | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | AUIRFR9024NTRL vs AUIRFR9024NTR |
| AUIRFR9024NTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | AUIRFR9024NTRL vs AUIRFR9024NTRR |
| IRFR9024NTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | AUIRFR9024NTRL vs IRFR9024NTRR |
| IRFR9024NCTR | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | AUIRFR9024NTRL vs IRFR9024NCTR |
| IRFR9024NTRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | AUIRFR9024NTRL vs IRFR9024NTRPBF |
AUIRFR9024NTRL Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the AUIRFR9024NTRL is -55°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 125°C for optimal performance and reliability.
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To ensure proper biasing, follow the recommended biasing scheme outlined in the datasheet. Typically, this involves connecting the gate to a voltage source through a resistor, and ensuring the drain-source voltage is within the recommended range. Additionally, consider using a gate driver IC to provide a stable and controlled gate voltage.
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For optimal thermal management, use a PCB with a thick copper layer (at least 2 oz) and ensure good thermal conductivity between the device and the heat sink. Use thermal vias to dissipate heat from the device to the heat sink. Keep the PCB layout compact and symmetrical to minimize parasitic inductance and capacitance. Follow the recommended land pattern and thermal pad layout in the datasheet.
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Use a voltage regulator or a voltage clamp to limit the voltage across the device. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC. Consider using a fuse or a PTC (Positive Temperature Coefficient) thermistor to provide additional protection.
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Use ESD protection devices such as TVS (Transient Voltage Suppressor) diodes or ESD protection arrays on the input and output pins of the device. Ensure that the PCB layout and component placement minimize the risk of ESD damage. Follow proper handling and storage procedures to prevent ESD damage during manufacturing and assembly.