Part Details for AUIRF6215STRL by International Rectifier
Results Overview of AUIRF6215STRL by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
AUIRF6215STRL Information
AUIRF6215STRL by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF6215STRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 2 | 128 |
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$1.3068 / $2.8000 | Buy Now |
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Quest Components | 102 |
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$1.8750 / $3.7500 | Buy Now |
Part Details for AUIRF6215STRL
AUIRF6215STRL CAD Models
AUIRF6215STRL Part Data Attributes
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AUIRF6215STRL
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRF6215STRL
International Rectifier
Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3/2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 310 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.29 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF6215STRL
This table gives cross-reference parts and alternative options found for AUIRF6215STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF6215STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF6215STRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | AUIRF6215STRL vs IRF6215STRL |
AUIRF6215STRL Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the AUIRF6215STRL is 150°C. However, it's recommended to keep the junction temperature below 125°C for reliable operation and to ensure a long lifespan.
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To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is properly attached to the device. Additionally, consider using a thermal pad or thermal tape to improve heat transfer.
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The recommended gate drive voltage for the AUIRF6215STRL is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the AUIRF6215STRL is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate charge, and parasitic inductance when designing the circuit. Additionally, ensure the PCB layout is optimized for high-frequency operation.
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To protect the AUIRF6215STRL from overvoltage and overcurrent conditions, consider using a voltage clamp or a transient voltage suppressor (TVS) diode. Additionally, use a current sense resistor and a comparator or an overcurrent protection IC to detect and respond to overcurrent conditions.