-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRF4905 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
29T7222
|
Newark | Mosfet Transistor, P Channel, -74 A, -55 V, 0.02 Ohm, -10 V, -2 V Rohs Compliant: Yes |Infineon AUIRF4905 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.4500 / $4.8900 | Buy Now |
DISTI #
85968968
|
Verical | Trans MOSFET P-CH Si 55V 74A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 110 Package Multiple: 1 Date Code: 1301 | Americas - 3463 |
|
$3.4250 | Buy Now |
DISTI #
87205533
|
Verical | Trans MOSFET P-CH Si 55V 74A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 110 Package Multiple: 1 Date Code: 2101 | Americas - 619 |
|
$3.4250 | Buy Now |
DISTI #
85970119
|
Verical | Trans MOSFET P-CH Si 55V 74A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube RoHS: Compliant Min Qty: 110 Package Multiple: 1 Date Code: 1201 | Americas - 206 |
|
$3.4250 | Buy Now |
|
Rochester Electronics | 20V-150V P-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 4288 |
|
$2.1900 / $2.7400 | Buy Now |
|
Cytech Systems Limited | MOSFET P-CH 55V 74A TO220AB | 5000 |
|
RFQ | |
DISTI #
SP001519228
|
EBV Elektronik | Trans MOSFET PCH 55V 74A 3Pin3Tab TO220AB Tube (Alt: SP001519228) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
LCSC | 55V 74A 0.0210V38A 200W 2V 1 N-channel TO-220AB MOSFETs ROHS | 5 |
|
$4.5508 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
AUIRF4905
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
AUIRF4905
Infineon Technologies AG
Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 930 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 74 A | |
Drain-source On Resistance-Max | 0.02 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 200 W | |
Pulsed Drain Current-Max (IDM) | 260 A | |
Qualification Status | Not Qualified | |
Reference Standard | AEC-Q101 | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
The maximum junction temperature of the AUIRF4905 is 175°C. It's essential to ensure that the device operates within this temperature range to prevent damage or malfunction.
Proper cooling is crucial for the AUIRF4905. Ensure good thermal conductivity by using a heat sink with a thermal interface material (TIM) and a sufficient airflow around the device. The datasheet provides thermal resistance values to help with thermal design.
The recommended gate drive voltage for the AUIRF4905 is between 10V and 15V. This ensures proper switching and minimizes the risk of damage or malfunction.
Yes, the AUIRF4905 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
To protect the AUIRF4905 from overvoltage and overcurrent, use a suitable voltage regulator and overcurrent protection circuitry. The datasheet provides guidelines for overvoltage protection and overcurrent detection.