Part Details for AUIRF4104STRL by International Rectifier
Results Overview of AUIRF4104STRL by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
AUIRF4104STRL Information
AUIRF4104STRL by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF4104STRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRF4104STRL-ND
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DigiKey | MOSFET N-CH 40V 75A D2PAK Min Qty: 226 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
456 In Stock |
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$1.3300 | Buy Now |
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Rochester Electronics | 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 456 |
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$1.0200 / $1.2800 | Buy Now |
Part Details for AUIRF4104STRL
AUIRF4104STRL CAD Models
AUIRF4104STRL Part Data Attributes
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AUIRF4104STRL
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRF4104STRL
International Rectifier
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 470 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF4104STRL
This table gives cross-reference parts and alternative options found for AUIRF4104STRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF4104STRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFZ46NS | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | AUIRF4104STRL vs AUIRFZ46NS |
| IRL2505SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK , 3 PIN | AUIRF4104STRL vs IRL2505SPBF |
| IRFR014PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | AUIRF4104STRL vs IRFR014PBF |
| IRFBA1404PPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN | AUIRF4104STRL vs IRFBA1404PPBF |
| MTP7P06 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 7A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | AUIRF4104STRL vs MTP7P06 |
| IRFR014TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | AUIRF4104STRL vs IRFR014TRRPBF |
| IRFR014 | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | AUIRF4104STRL vs IRFR014 |
| MTD8N06E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 | AUIRF4104STRL vs MTD8N06E |
| IRF3708PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | AUIRF4104STRL vs IRF3708PBF |
| AUIRFZ48ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF4104STRL vs AUIRFZ48ZSTRL |
AUIRF4104STRL Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the AUIRF4104STRL is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
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Proper cooling is crucial for the AUIRF4104STRL. Ensure good thermal contact between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W. Also, make sure to follow the recommended PCB layout and thermal design guidelines.
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The recommended gate drive voltage for the AUIRF4104STRL is between 10V and 15V. However, the device can tolerate up to 20V gate drive voltage. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
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Yes, the AUIRF4104STRL is suitable for high-frequency switching applications up to 1MHz. However, it's essential to consider the device's switching losses, gate drive requirements, and thermal management when designing the application.
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To protect the AUIRF4104STRL from overvoltage and overcurrent conditions, use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit. Also, ensure the device is operated within its recommended operating conditions and follow the recommended PCB layout guidelines.