Datasheets
AUIRF4104STRL by:

Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3

Part Details for AUIRF4104STRL by Infineon Technologies AG

Results Overview of AUIRF4104STRL by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

AUIRF4104STRL Information

AUIRF4104STRL by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for AUIRF4104STRL

Part # Distributor Description Stock Price Buy
DISTI # AUIRF4104STRL
Avnet Americas Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRF4104STRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 942-AUIRF4104STRL
Mouser Electronics MOSFETs AUTO 40V 1 N-CH HEXFET 1.4mOhms RoHS: Compliant 0
Order Now
DISTI # SP001518490
EBV Elektronik Trans MOSFET NCH 40V 120A 3Pin2Tab D2PAK TR (Alt: SP001518490) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for AUIRF4104STRL

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AUIRF4104STRL Part Data Attributes

AUIRF4104STRL Infineon Technologies AG
Buy Now Datasheet
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AUIRF4104STRL Infineon Technologies AG Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description D2PAK-3
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 220 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.0055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-XSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W
Pulsed Drain Current-Max (IDM) 470 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

AUIRF4104STRL Related Parts

AUIRF4104STRL Frequently Asked Questions (FAQ)

  • Infineon provides a recommended PCB layout for the AUIRF4104STRL in their application note AN2014-01. It includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.

  • The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a value between 10 ohms and 100 ohms. Infineon provides a gate resistor selection guide in their application note AN2014-02.

  • The maximum allowed junction temperature for the AUIRF4104STRL is 150°C. However, it's recommended to keep the junction temperature below 125°C for optimal reliability and performance.

  • Yes, the AUIRF4104STRL can be used in a half-bridge configuration. However, it's essential to ensure that the device is properly biased and that the gate-source voltage is within the recommended range to avoid damage.

  • The recommended dead-time for the AUIRF4104STRL depends on the specific application requirements, such as switching frequency and voltage. A general guideline is to use a dead-time of 100 ns to 500 ns to ensure proper switching and minimize losses.

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