Part Details for AUIRF4104STRL by Infineon Technologies AG
Results Overview of AUIRF4104STRL by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AUIRF4104STRL Information
AUIRF4104STRL by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF4104STRL
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AUIRF4104STRL
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Avnet Americas | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: AUIRF4104STRL) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
942-AUIRF4104STRL
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Mouser Electronics | MOSFETs AUTO 40V 1 N-CH HEXFET 1.4mOhms RoHS: Compliant | 0 |
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Order Now | |
DISTI #
SP001518490
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EBV Elektronik | Trans MOSFET NCH 40V 120A 3Pin2Tab D2PAK TR (Alt: SP001518490) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRF4104STRL
AUIRF4104STRL CAD Models
AUIRF4104STRL Part Data Attributes
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AUIRF4104STRL
Infineon Technologies AG
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Datasheet
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AUIRF4104STRL
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | D2PAK-3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 220 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0055 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-XSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 140 W | |
Pulsed Drain Current-Max (IDM) | 470 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
AUIRF4104STRL Frequently Asked Questions (FAQ)
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Infineon provides a recommended PCB layout for the AUIRF4104STRL in their application note AN2014-01. It includes guidelines for thermal vias, copper thickness, and component placement to ensure optimal thermal performance.
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The gate resistor value depends on the specific application requirements, such as switching frequency, voltage, and current. A general guideline is to use a value between 10 ohms and 100 ohms. Infineon provides a gate resistor selection guide in their application note AN2014-02.
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The maximum allowed junction temperature for the AUIRF4104STRL is 150°C. However, it's recommended to keep the junction temperature below 125°C for optimal reliability and performance.
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Yes, the AUIRF4104STRL can be used in a half-bridge configuration. However, it's essential to ensure that the device is properly biased and that the gate-source voltage is within the recommended range to avoid damage.
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The recommended dead-time for the AUIRF4104STRL depends on the specific application requirements, such as switching frequency and voltage. A general guideline is to use a dead-time of 100 ns to 500 ns to ensure proper switching and minimize losses.