Part Details for AUIRF4104S by Infineon Technologies AG
Results Overview of AUIRF4104S by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
AUIRF4104S Information
AUIRF4104S by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF4104S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
70019352
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RS | AUIRF4104S N-channel MOSFET Transistor, 120 A, 40 V, 4-Pin D2PAK Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$1.0500 / $1.3200 | RFQ |
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Rochester Electronics | 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 30 |
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$1.0800 / $1.3500 | Buy Now |
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DISTI #
SP001516518
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EBV Elektronik | Trans MOSFET NCH 40V 120A 3Pin2Tab D2PAK Tube (Alt: SP001516518) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRF4104S
AUIRF4104S CAD Models
AUIRF4104S Part Data Attributes
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AUIRF4104S
Infineon Technologies AG
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Datasheet
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AUIRF4104S
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-XSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 470 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
AUIRF4104S Frequently Asked Questions (FAQ)
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The AUIRF4104S is designed to operate up to 1 GHz, but it can be used up to 2.7 GHz with some performance degradation.
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To optimize the PCB layout, keep the RF traces as short as possible, use a solid ground plane, and avoid vias under the device. Also, use a 50-ohm microstrip line for the RF input and output.
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The AUIRF4104S has a thermal pad on the bottom of the package. Use a thermal interface material (TIM) and a heat sink to dissipate heat. Ensure good thermal conductivity between the device and the heat sink.
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Yes, the AUIRF4104S can be used in a push-pull configuration to achieve higher output power. However, this requires careful impedance matching and biasing to ensure stable operation.
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Use ESD protection devices, such as TVS diodes, at the input and output of the device. Also, follow proper handling and storage procedures to prevent ESD damage.