Part Details for AUIRF4104 by International Rectifier
Results Overview of AUIRF4104 by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
AUIRF4104 Information
AUIRF4104 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF4104
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 20V-40V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 1324 |
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$0.9023 / $1.4600 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB ECCN: EAR99 RoHS: Not Compliant |
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RFQ |
Part Details for AUIRF4104
AUIRF4104 CAD Models
AUIRF4104 Part Data Attributes
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AUIRF4104
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRF4104
International Rectifier
Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 470 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF4104
This table gives cross-reference parts and alternative options found for AUIRF4104. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF4104, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF4104PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 | AUIRF4104 vs IRF4104PBF |
| IRF4104 | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | AUIRF4104 vs IRF4104 |
| AUIRF4104 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | AUIRF4104 vs AUIRF4104 |
AUIRF4104 Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the AUIRF4104 is 175°C. Exceeding this temperature can lead to device failure or reduced lifespan.
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Proper cooling of the AUIRF4104 can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good airflow around the device. The heat sink should be attached using a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K.
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The recommended PCB layout for the AUIRF4104 involves using a 2-layer or 4-layer board with a solid ground plane, and keeping the high-frequency switching nodes (e.g. drain-source voltage) as short as possible. The layout should also minimize the loop area of the drain-source current path to reduce EMI.
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Yes, the AUIRF4104 is suitable for high-reliability applications. It is designed and manufactured to meet the requirements of AEC-Q101, which ensures the device can withstand the rigors of automotive and other high-reliability environments.
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To protect the AUIRF4104 from ESD, handle the device by the body or pins, avoid touching the die, and use an ESD wrist strap or mat. The device should also be stored in an ESD-protective package or bag when not in use.