Part Details for AUIRF3205ZSTRL by International Rectifier
Results Overview of AUIRF3205ZSTRL by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AUIRF3205ZSTRL Information
AUIRF3205ZSTRL by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF3205ZSTRL
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 742 |
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RFQ |
Part Details for AUIRF3205ZSTRL
AUIRF3205ZSTRL CAD Models
AUIRF3205ZSTRL Part Data Attributes
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AUIRF3205ZSTRL
International Rectifier
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Datasheet
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AUIRF3205ZSTRL
International Rectifier
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | D2PAK | |
Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 250 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0065 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 170 W | |
Pulsed Drain Current-Max (IDM) | 440 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN OVER NICKEL | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for AUIRF3205ZSTRL
This table gives cross-reference parts and alternative options found for AUIRF3205ZSTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3205ZSTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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AUIRF3205ZS | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs AUIRF3205ZS |
IRF3205ZSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs IRF3205ZSTRLPBF |
AUIRF3205ZSTRL Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the AUIRF3205ZSTRL is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
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To calculate the power dissipation of the AUIRF3205ZSTRL, you need to consider the voltage drop across the device, the current flowing through it, and the thermal resistance. The power dissipation (Pd) can be calculated using the formula: Pd = (Vds * Ids) + (Vgs * Igs), where Vds is the drain-source voltage, Ids is the drain-source current, Vgs is the gate-source voltage, and Igs is the gate-source current.
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To minimize EMI and thermal issues, it's recommended to follow a good PCB layout practice for the AUIRF3205ZSTRL. This includes keeping the high-frequency nodes (such as the drain and source pins) away from the low-frequency nodes (such as the gate pin), using a solid ground plane, and placing the device close to the heat sink or thermal pad. Additionally, it's recommended to use a Kelvin connection for the source pin to reduce the inductance and improve the thermal performance.
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Yes, the AUIRF3205ZSTRL can be used in a synchronous buck converter design. In fact, it's a popular choice for this application due to its low on-resistance, fast switching speed, and low gate charge. However, it's essential to ensure that the device is properly driven and that the PCB layout is optimized for high-frequency operation.
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When selecting a gate driver for the AUIRF3205ZSTRL, consider the following factors: the gate driver's output current capability, its ability to handle the device's gate charge, and its compatibility with the device's voltage rating. Additionally, consider the gate driver's propagation delay, rise and fall times, and its ability to provide a clean, noise-free signal to the gate pin.