Part Details for AUIRF3205ZSTRL by Infineon Technologies AG
Results Overview of AUIRF3205ZSTRL by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
AUIRF3205ZSTRL Information
AUIRF3205ZSTRL by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF3205ZSTRL
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
AUIRF3205ZSTRLDKR-ND
|
DigiKey | MOSFET N-CH 55V 75A D2PAK Min Qty: 1 Lead time: 52 Weeks Container: Digi-Reel® | Temporarily Out of Stock |
|
Buy Now | |
|
DISTI #
SP001521632
|
EBV Elektronik | Trans MOSFET NCH 55V 110A 3Pin2Tab D2PAK TR (Alt: SP001521632) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 143 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
|
|
Win Source Electronics | MOSFET N-CH 55V 75A D2PAK | 88440 |
|
$1.8769 / $2.8154 | Buy Now |
Part Details for AUIRF3205ZSTRL
AUIRF3205ZSTRL CAD Models
AUIRF3205ZSTRL Part Data Attributes
|
|
AUIRF3205ZSTRL
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
AUIRF3205ZSTRL
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0065 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 440 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF3205ZSTRL
This table gives cross-reference parts and alternative options found for AUIRF3205ZSTRL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF3205ZSTRL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF3205ZSTRLPBF | Infineon Technologies AG | $1.1787 | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs IRF3205ZSTRLPBF |
| IRF3205ZSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, | AUIRF3205ZSTRL vs IRF3205ZSPBF |
| IRF3205ZSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs IRF3205ZSPBF |
| IRF3205ZSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs IRF3205ZSTRR |
| IRF3205ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs IRF3205ZSTRL |
| IRF3205ZSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs IRF3205ZSTRRPBF |
| AUIRF3205ZS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF3205ZSTRL vs AUIRF3205ZS |
AUIRF3205ZSTRL Frequently Asked Questions (FAQ)
-
The maximum junction temperature of the AUIRF3205ZSTRL is 175°C.
-
To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and ensuring good airflow around the device.
-
To minimize EMI, it's recommended to follow a compact PCB layout, use a solid ground plane, and keep sensitive analog traces away from the power stage. Additionally, use shielding and filtering components as needed.
-
The gate resistor value depends on the specific application and switching frequency. A general guideline is to start with a value between 10 ohms and 100 ohms and adjust based on the device's switching characteristics and desired performance.
-
Monitor the device's junction temperature, voltage, and current to ensure reliable operation. Also, keep an eye on the device's switching frequency, duty cycle, and output voltage to prevent overheating or overvoltage conditions.