Part Details for AUIRF1405ZS by International Rectifier
Results Overview of AUIRF1405ZS by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (9 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Automotive
AUIRF1405ZS Information
AUIRF1405ZS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF1405ZS
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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Vyrian | Transistors | 1601 |
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RFQ |
Part Details for AUIRF1405ZS
AUIRF1405ZS CAD Models
AUIRF1405ZS Part Data Attributes
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AUIRF1405ZS
International Rectifier
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Datasheet
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AUIRF1405ZS
International Rectifier
Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, PLASTIC, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 270 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 150 A | |
| Drain-source On Resistance-Max | 0.0049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 600 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF1405ZS
This table gives cross-reference parts and alternative options found for AUIRF1405ZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF1405ZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1405ZSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZSTRLPBF |
| AUIRF1405ZS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF1405ZS vs AUIRF1405ZS |
| AUIRF1405ZSTRL | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF1405ZS vs AUIRF1405ZSTRL |
| IRF1405ZSPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZSPBF |
| IRF1405ZSTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZSTRRPBF |
| IRF1405ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZSTRL |
| IRF1405ZSTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZSTRR |
| IRF1405ZS | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZS |
| IRF1405ZSPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF1405ZS vs IRF1405ZSPBF |
AUIRF1405ZS Frequently Asked Questions (FAQ)
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The maximum junction temperature of AUIRF1405ZS is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
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To calculate the power dissipation of AUIRF1405ZS, you need to consider the voltage drop across the MOSFET, the current flowing through it, and the RDS(on) value. The power dissipation can be calculated using the formula: Pd = (Vds * Ids) + (RDS(on) * Ids^2).
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For optimal performance and thermal management, it's recommended to use a PCB layout with a large copper area for heat dissipation, keep the source and drain pins as close as possible, and use a Kelvin connection for the gate driver. Additionally, ensure that the PCB is designed to handle the high current and voltage ratings of the MOSFET.
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Yes, AUIRF1405ZS is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the gate charge, gate resistance, and parasitic capacitances when designing the gate driver circuit to ensure reliable operation and minimize switching losses.
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To protect AUIRF1405ZS from overvoltage and overcurrent, it's recommended to use a voltage clamp or a TVS diode to limit the voltage across the MOSFET, and a current sense resistor or a current limiter to detect and respond to overcurrent conditions. Additionally, ensure that the MOSFET is operated within its safe operating area (SOA).