Part Details for AUIRF1010ZS by International Rectifier
Results Overview of AUIRF1010ZS by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AUIRF1010ZS Information
AUIRF1010ZS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF1010ZS
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB ECCN: EAR99 RoHS: Compliant |
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Part Details for AUIRF1010ZS
AUIRF1010ZS CAD Models
AUIRF1010ZS Part Data Attributes
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AUIRF1010ZS
International Rectifier
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Datasheet
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AUIRF1010ZS
International Rectifier
Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | D2PAK | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 55 V | |
| Drain Current-Max (ID) | 94 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 360 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF1010ZS
This table gives cross-reference parts and alternative options found for AUIRF1010ZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF1010ZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRF1010ZS | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, D2PAK-3 | AUIRF1010ZS vs AUIRF1010ZS |
AUIRF1010ZS Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) of the AUIRF1010ZS is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
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To calculate the power dissipation of the AUIRF1010ZS, you need to know the drain-source on-resistance (Rds(on)), the drain current (Id), and the input voltage (Vin). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) x Id^2 + (Vin - Vds) x Id, where Vds is the drain-source voltage.
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To minimize EMI and thermal issues, it's recommended to use a multi-layer PCB with a solid ground plane, keep the high-frequency traces short and away from the MOSFET, and use a thermal pad or heat sink to dissipate heat. Additionally, ensure that the drain and source pins are connected to a low-impedance path to minimize ringing and oscillations.
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Yes, the AUIRF1010ZS is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the gate charge, gate resistance, and drain-source capacitance when designing the gate drive circuit to ensure proper switching performance and minimize losses.
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To protect the AUIRF1010ZS from overvoltage and overcurrent conditions, you can use a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect overcurrent conditions. Additionally, consider using a gate driver with built-in overcurrent protection and undervoltage lockout (UVLO) to prevent the MOSFET from operating in an unstable region.