Part Details for AUIRF1010EZS by International Rectifier
Results Overview of AUIRF1010EZS by International Rectifier
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AUIRF1010EZS Information
AUIRF1010EZS by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF1010EZS
| Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Not Compliant |
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RFQ | |
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Vyrian | Transistors | 243 |
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RFQ |
Part Details for AUIRF1010EZS
AUIRF1010EZS CAD Models
AUIRF1010EZS Part Data Attributes
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AUIRF1010EZS
International Rectifier
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Datasheet
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AUIRF1010EZS
International Rectifier
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Package Description | ROHS COMPLIANT, D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF1010EZS
This table gives cross-reference parts and alternative options found for AUIRF1010EZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF1010EZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1010EZSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF1010EZS vs IRF1010EZSTRLPBF |
AUIRF1010EZS Frequently Asked Questions (FAQ)
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The maximum junction temperature (Tj) for the AUIRF1010EZS is 175°C. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to ensure a long lifespan.
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To calculate the power dissipation of the AUIRF1010EZS, you need to know the drain-source on-resistance (Rds(on)), the drain current (ID), and the voltage drop across the device (Vds). The power dissipation (Pd) can be calculated using the formula: Pd = Rds(on) * ID^2 + Vds * ID. You can find the Rds(on) and Vds values in the datasheet.
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To minimize thermal resistance, it's recommended to use a PCB layout with a large copper area connected to the drain pad (D) and a thermal via connecting the drain pad to the bottom layer of the PCB. This helps to dissipate heat efficiently. Additionally, keep the source pad (S) and gate pad (G) as close as possible to the device to reduce parasitic inductance.
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Yes, the AUIRF1010EZS is suitable for high-frequency switching applications up to 1 MHz. However, you need to ensure that the device is properly biased and that the PCB layout is optimized for high-frequency operation. You may also need to add additional components, such as snubbers or gate resistors, to prevent ringing and oscillations.
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To protect the AUIRF1010EZS from ESD, handle the device by the body or use an ESD wrist strap or mat. Avoid touching the pins or exposing the device to static electricity. You can also add ESD protection devices, such as TVS diodes or ESD arrays, to the PCB to protect the device from ESD events.