Part Details for AUIRF1010EZS by Infineon Technologies AG
Results Overview of AUIRF1010EZS by Infineon Technologies AG
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AUIRF1010EZS Information
AUIRF1010EZS by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF1010EZS
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRF1010EZS-448-ND
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DigiKey | AUIRF1010 - 55V-60V N-CHANNEL AU Min Qty: 197 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
402 In Stock |
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$1.5300 | Buy Now |
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DISTI #
85965571
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Verical | Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube Min Qty: 205 Package Multiple: 1 Date Code: 1901 | Americas - 402 |
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$1.8375 | Buy Now |
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Rochester Electronics | 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 402 |
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$0.9106 / $1.4700 | Buy Now |
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DISTI #
SP001516450
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EBV Elektronik | Trans MOSFET NCH 60V 84A 3Pin2Tab D2PAK Tube (Alt: SP001516450) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 143 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for AUIRF1010EZS
AUIRF1010EZS CAD Models
AUIRF1010EZS Part Data Attributes
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AUIRF1010EZS
Infineon Technologies AG
Buy Now
Datasheet
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AUIRF1010EZS
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | D2PAK-3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G2 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF1010EZS
This table gives cross-reference parts and alternative options found for AUIRF1010EZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF1010EZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF1010EZSTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 | AUIRF1010EZS vs IRF1010EZSTRLPBF |
AUIRF1010EZS Frequently Asked Questions (FAQ)
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Infineon recommends a 2-layer PCB with a thermal via array underneath the package to ensure good thermal conductivity. A minimum of 10 thermal vias with a diameter of 0.3 mm is recommended.
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The AUIRF1010EZS requires a 5V supply voltage (VCC) and a 3.3V or 5V logic supply voltage (VDD). Ensure that the voltage regulators are stable and decoupled properly to prevent noise and oscillations.
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The maximum allowable power dissipation for the AUIRF1010EZS is 2.5 W. Ensure that the device is properly heat-sunk and the PCB is designed to dissipate heat efficiently.
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Use a spectrum analyzer to measure the device's output spectrum and check for any signs of distortion or spurious emissions. Verify that the device is properly biased and that the input signal is within the recommended specifications.
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The recommended input signal level for the AUIRF1010EZS is between -20 dBm and 10 dBm. Ensure that the input signal is properly terminated and matched to the device's input impedance.