Part Details for AUIRF1010EZ by International Rectifier
Results Overview of AUIRF1010EZ by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
AUIRF1010EZ Information
AUIRF1010EZ by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for AUIRF1010EZ
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-AUIRF1010EZ-ND
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DigiKey | AUTOMOTIVE HEXFET N CHANNEL Min Qty: 195 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
617 In Stock |
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$1.5400 | Buy Now |
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Bristol Electronics | 20 |
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RFQ | ||
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Rochester Electronics | 55V-60V N-Channel Automotive MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 379 |
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$0.9149 / $1.4800 | Buy Now |
Part Details for AUIRF1010EZ
AUIRF1010EZ CAD Models
AUIRF1010EZ Part Data Attributes
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AUIRF1010EZ
International Rectifier
Buy Now
Datasheet
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Compare Parts:
AUIRF1010EZ
International Rectifier
Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | ROHS COMPLIANT PACKAGE-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 180 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.0085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 340 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for AUIRF1010EZ
This table gives cross-reference parts and alternative options found for AUIRF1010EZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AUIRF1010EZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AUIRFZ46NS | International Rectifier | Check for Price | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | AUIRF1010EZ vs AUIRFZ46NS |
| IRL2505SPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 104A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK , 3 PIN | AUIRF1010EZ vs IRL2505SPBF |
| IRFR014PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | AUIRF1010EZ vs IRFR014PBF |
| IRFBA1404PPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN | AUIRF1010EZ vs IRFBA1404PPBF |
| MTP7P06 | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 7A I(D), 60V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | AUIRF1010EZ vs MTP7P06 |
| IRFR014TRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | AUIRF1010EZ vs IRFR014TRRPBF |
| IRFR014 | International Rectifier | Check for Price | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | AUIRF1010EZ vs IRFR014 |
| MTD8N06E | Motorola Semiconductor Products | Check for Price | Power Field-Effect Transistor, 8A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 369A-13, DPAK-3 | AUIRF1010EZ vs MTD8N06E |
| IRF3708PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | AUIRF1010EZ vs IRF3708PBF |
| AUIRFZ48ZSTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | AUIRF1010EZ vs AUIRFZ48ZSTRL |
AUIRF1010EZ Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the AUIRF1010EZ is -55°C to 150°C.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 100V.
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To minimize parasitic inductance, use a symmetrical PCB layout with short, wide traces, and place the device close to the power source. Avoid using vias under the device, and use a solid ground plane.
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To protect the AUIRF1010EZ from ESD, use an ESD wrist strap or mat, handle the device by the body or pins, and avoid touching the pins or die. Use ESD-sensitive handling and storage procedures.
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The recommended gate resistor value for the AUIRF1010EZ is between 10Ω and 100Ω, depending on the specific application and switching frequency.