Datasheets
ATF-541M4-TR1 by:

RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4

Part Details for ATF-541M4-TR1 by Broadcom Limited

Results Overview of ATF-541M4-TR1 by Broadcom Limited

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ATF-541M4-TR1 Information

ATF-541M4-TR1 by Broadcom Limited is an RF Small Signal Field-Effect Transistor.
RF Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for ATF-541M4-TR1

Part # Distributor Description Stock Price Buy
DISTI # ATF-541M4-TR1
EBV Elektronik Trans JFET NCH 5V 120mA 4Pin MiniPAK TR (Alt: ATF-541M4-TR1) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 EBV - 0
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Part Details for ATF-541M4-TR1

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ATF-541M4-TR1 Part Data Attributes

ATF-541M4-TR1 Broadcom Limited
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ATF-541M4-TR1 Broadcom Limited RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer BROADCOM INC
Package Description 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.75
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 5 V
Drain Current-Max (ID) 0.12 A
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band C BAND
JESD-30 Code R-PBCC-N4
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.36 W
Power Gain-Min (Gp) 15.5 dB
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for ATF-541M4-TR1

This table gives cross-reference parts and alternative options found for ATF-541M4-TR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ATF-541M4-TR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
ATF-541M4-TR2 Agilent Technologies Inc Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 ATF-541M4-TR1 vs ATF-541M4-TR2
Part Number Manufacturer Composite Price Description Compare
ATF-541M4-TR2 Broadcom Limited Check for Price RF Small Signal Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 1.40 X 1.20 MM, 0.70 MM HEIGHT, LEAD FREE, LEADLESS, MINIPAK-4 ATF-541M4-TR1 vs ATF-541M4-TR2
ATF-541M4-TR2G Agilent Technologies Inc Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 ATF-541M4-TR1 vs ATF-541M4-TR2G
ATF-541M4-TR1 Agilent Technologies Inc Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 ATF-541M4-TR1 vs ATF-541M4-TR1
ATF-541M4-BLKG Agilent Technologies Inc Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 ATF-541M4-TR1 vs ATF-541M4-BLKG
ATF-541M4-TR1G Agilent Technologies Inc Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, 1.4 MM X 1.2 MM, 0.7 MM HEIGHT, MINIATURE PACKAGE-4 ATF-541M4-TR1 vs ATF-541M4-TR1G

ATF-541M4-TR1 Related Parts

ATF-541M4-TR1 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a solid ground plane and a separate power plane is recommended. Keep the signal traces short and away from noise sources. Use a common mode filter or a ferrite bead to reduce EMI.

  • Use a heat sink or a thermal pad to dissipate heat. Ensure good airflow around the device. Reduce the power consumption or use a lower power variant if possible. Monitor the junction temperature and adjust the operating conditions accordingly.

  • Critical timing parameters include clock-to-output delay, clock frequency, and input setup and hold times. Ensure that the clock frequency is within the specified range, and input signals meet the setup and hold times. Use a timing diagram to verify the signal relationships.

  • Check the power supply voltage and ensure it's within the specified range. Verify the clock signal and its frequency. Check the input signals and their timing relationships. Use a logic analyzer or an oscilloscope to debug the signals. Consult the datasheet and application notes for troubleshooting guidelines.

  • Use ESD protection devices such as TVS diodes or ESD arrays on the input and output pins. Ensure that the PCB design and layout minimize the risk of latch-up. Follow the recommended PCB design guidelines and use a latch-up prevention circuit if necessary.

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