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Memory / Flash Memories / AT45DB041E-SSHN-B
Datasheets
AT45DB041E-SSHN-B by:

4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-N, 98/Tube

Part Details for AT45DB041E-SSHN-B by Renesas Electronics Corporation

Results Overview of AT45DB041E-SSHN-B by Renesas Electronics Corporation

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Applications Automotive

AT45DB041E-SSHN-B Information

AT45DB041E-SSHN-B by Renesas Electronics Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for AT45DB041E-SSHN-B

Part # Distributor Description Stock Price Buy
DISTI # 09AH8555
Newark 8-Soic-N, Ind Temp, 1.65V, Tube Rohs Compliant: Yes |Renesas AT45DB041E-SSHN-B RoHS: Compliant Min Qty: 98 Package Multiple: 1 Date Code: 0 Container: Bulk 3270
  • 1 $1.2400
$1.2400 Buy Now
DISTI # 1695-AT45DB041E-SSHN-B-ND
DigiKey IC FLASH 4MBIT SPI 85MHZ 8SOIC Min Qty: 1 Lead time: 18 Weeks Container: Tube Temporarily Out of Stock
  • 1 $1.2600
  • 10 $1.1810
  • 25 $1.1480
  • 98 $1.0980
  • 196 $1.0725
  • 294 $1.0577
  • 588 $1.0323
  • 1,078 $1.0103
  • 5,096 $0.9546
$0.9546 / $1.2600 Buy Now
DISTI # AT45DB041E-SSHN-B
Avnet Americas Flash Memory, Serial NOR, 4 Mbit, 2048 Pages x 264Byte, SPI ,8 Pins, WSOIC - Rail/Tube (Alt: AT45DB041E-SSHN-B) RoHS: Compliant Min Qty: 98 Package Multiple: 1 Lead time: 18 Weeks, 0 Days Container: Tube 3270
  • 1 $1.2400
$1.2400 Buy Now
DISTI # 988-45DB041ESSHNB
Mouser Electronics NOR Flash 4 Mbit, Wide Vcc (1.65V to 3.6V), -40C to 85C, 264 Byte Binary Page Mode, SOIC-N 150mil (Tube), Single SPI DataFlash RoHS: Compliant 1662
  • 1 $1.2600
  • 10 $1.1000
  • 98 $1.0700
  • 294 $1.0500
  • 588 $1.0300
  • 1,078 $1.0100
  • 5,096 $0.9540
$0.9540 / $1.2600 Buy Now
DISTI # AT45DB041E-SSHN-B
TME IC: FLASH memory, 4MbFLASH, SPI / RapidS, 85MHz, 1.65÷3.6V, SO8 Min Qty: 1 145
  • 1 $1.6100
  • 5 $1.4600
  • 25 $1.2800
  • 98 $1.0000
$1.0000 / $1.6100 Buy Now
DISTI # AT45DB041E-SSHN-B
Avnet Silica Flash Memory Serial NOR 4 Mbit 2048 Pages x 264Byte SPI 8 Pins WSOIC (Alt: AT45DB041E-SSHN-B) RoHS: Compliant Min Qty: 98 Package Multiple: 98 Lead time: 19 Weeks, 0 Days Silica - 9310
Buy Now

Part Details for AT45DB041E-SSHN-B

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AT45DB041E-SSHN-B Part Data Attributes

Parametric Data
AT45DB041E-SSHN-B Renesas Electronics Corporation
Buy Now Datasheet
Compare Parts:
AT45DB041E-SSHN-B Renesas Electronics Corporation 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-N, 98/Tube
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer RENESAS ELECTRONICS CORP
Part Package Code SOIC-N
Reach Compliance Code compliant
Factory Lead Time 18 Weeks
Samacsys Manufacturer Renesas Electronics
Clock Frequency-Max (fCLK) 85 MHz
Data Retention Time-Min 20
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PDSO-G8
JESD-609 Code e4
Length 4.925 mm
Memory Density 4194304 bit
Memory IC Type FLASH
Memory Width 1
Moisture Sensitivity Level 1
Number of Functions 1
Number of Terminals 8
Number of Words 4194304 words
Number of Words Code 4000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 4MX1
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code SOP8,.25
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Parallel/Serial SERIAL
Programming Voltage 3 V
Qualification Status Not Qualified
Seated Height-Max 1.75 mm
Serial Bus Type SPI
Standby Current-Max 0.00004 A
Supply Current-Max 0.016 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Type NOR TYPE
Width 3.9 mm
Write Protection HARDWARE/SOFTWARE

Alternate Parts for AT45DB041E-SSHN-B

This table gives cross-reference parts and alternative options found for AT45DB041E-SSHN-B. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AT45DB041E-SSHN-B, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AT45DB041E-SSHNHA-T Renesas Electronics Corporation Check for Price Flash, 4MX1, PDSO8 AT45DB041E-SSHN-B vs AT45DB041E-SSHNHA-T
AT45DB041E-SSHN-T Renesas Electronics Corporation Check for Price 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-N, 4000/Tape & Reel AT45DB041E-SSHN-B vs AT45DB041E-SSHN-T
AT45DB041E-SSHNHC-T Renesas Electronics Corporation Check for Price Flash, 4MX1, PDSO8 AT45DB041E-SSHN-B vs AT45DB041E-SSHNHC-T
AT45DB041E-SHN2B-T Renesas Electronics Corporation Check for Price 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-W, 2000/Tape & Reel AT45DB041E-SSHN-B vs AT45DB041E-SHN2B-T
AT45DB041E-SSHN2B-T Renesas Electronics Corporation Check for Price 4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-N, 4000/Tape & Reel AT45DB041E-SSHN-B vs AT45DB041E-SSHN2B-T

AT45DB041E-SSHN-B Related Parts

AT45DB041E-SSHN-B Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for the AT45DB041E-SSHN-B is 2.7V to 3.6V.

  • Page write operations in the AT45DB041E-SSHN-B require a specific sequence of commands, including an erase command, a program command, and a verify command. Refer to the datasheet for the exact sequence and timing requirements.

  • The WP# (Write Protect) pin is used to prevent accidental writes to the device. When the WP# pin is low, the device is in a protected state, and writes are inhibited.

  • To implement a reliable erase operation, ensure that the device is properly powered, and the erase command is followed by a verify command to ensure the erase was successful. Also, follow the recommended erase timing and voltage requirements.

  • The AT45DB041E-SSHN-B supports up to 100,000 erase cycles per sector.

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