Part Details for AT45DB021E-SHN2B-T by Dialog Semiconductor GmbH
Results Overview of AT45DB021E-SHN2B-T by Dialog Semiconductor GmbH
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
AT45DB021E-SHN2B-T Information
AT45DB021E-SHN2B-T by Dialog Semiconductor GmbH is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part Details for AT45DB021E-SHN2B-T
AT45DB021E-SHN2B-T CAD Models
AT45DB021E-SHN2B-T Part Data Attributes
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AT45DB021E-SHN2B-T
Dialog Semiconductor GmbH
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Datasheet
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AT45DB021E-SHN2B-T
Dialog Semiconductor GmbH
Flash, 2MX1, PDSO8,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | DIALOG SEMICONDUCTOR GMBH | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.51 | |
| Clock Frequency-Max (fCLK) | 70 MHz | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Length | 5.29 mm | |
| Memory Density | 2097152 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Terminals | 8 | |
| Number of Words | 262144 words | |
| Number of Words Code | 256000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 256KX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOP | |
| Package Equivalence Code | SOP8,.3 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Parallel/Serial | SERIAL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Programming Voltage | 2.7 V | |
| Seated Height-Max | 2.16 mm | |
| Serial Bus Type | SPI | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 1.65 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Type | NOR TYPE | |
| Width | 5.24 mm |
Alternate Parts for AT45DB021E-SHN2B-T
This table gives cross-reference parts and alternative options found for AT45DB021E-SHN2B-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AT45DB021E-SHN2B-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| AT45DB021E-SHN-T | Renesas Electronics Corporation | Check for Price | 2Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-W, 2000/Tape & Reel | AT45DB021E-SHN2B-T vs AT45DB021E-SHN-T |
| AT45DB021E-SHN2B-T | Renesas Electronics Corporation | Check for Price | 2Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory, SOIC-W, 2000/Tape & Reel | AT45DB021E-SHN2B-T vs AT45DB021E-SHN2B-T |
| AT45DB021E-SHN2B-T | Atmel Corporation | Check for Price | Flash, 2MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, SOIC-8 | AT45DB021E-SHN2B-T vs AT45DB021E-SHN2B-T |
| AT45DB021E-SHN-B | Adesto Technologies Corporation | Check for Price | Flash, 2MX1, PDSO8, SOIC-8 | AT45DB021E-SHN2B-T vs AT45DB021E-SHN-B |
| AT45DB021E-SHN-B | Dialog Semiconductor GmbH | Check for Price | Flash, 2MX1, PDSO8, | AT45DB021E-SHN2B-T vs AT45DB021E-SHN-B |
| AT45DB021E-SHN-T | Atmel Corporation | Check for Price | Flash, 2MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, EIAJ, SOIC-8 | AT45DB021E-SHN2B-T vs AT45DB021E-SHN-T |
| AT45DB021E-SHN-B | Atmel Corporation | Check for Price | Flash, 2MX1, PDSO8, 0.208 INCH, GREEN, PLASTIC, SOIC-8 | AT45DB021E-SHN2B-T vs AT45DB021E-SHN-B |
AT45DB021E-SHN2B-T Frequently Asked Questions (FAQ)
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The recommended operating voltage range for the AT45DB021E-SHN2B-T is 2.7V to 3.6V, as specified in the datasheet. However, it's essential to note that the device can tolerate a voltage range of 2.5V to 4.0V for a short duration, but prolonged operation outside the recommended range may affect its performance and reliability.
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During power-up, the HOLD pin should be kept high until the power supply has reached a stable voltage level. During power-down, the HOLD pin should be kept low to prevent any unwanted writes or accesses to the device. It's also recommended to keep the HOLD pin low during reset or brown-out conditions.
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The AT45DB021E-SHN2B-T supports up to 100,000 erase cycles per sector, with a total of 2,048 sectors. This means the device can withstand a total of approximately 204,800,000 erase cycles (100,000 cycles/sector * 2,048 sectors) before its endurance is compromised.
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To implement a reliable write protection mechanism, you can use the WP pin to enable or disable write operations. When the WP pin is low, the device is in write-protect mode, and any write attempts will be ignored. You can also use the software-controlled write protection feature by setting the WPEN bit in the Status Register to 1. This will prevent any writes to the device until the WPEN bit is cleared.
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The recommended method for detecting the end of an erase or program operation is to poll the RY/BY pin, which goes low during the operation and returns high when the operation is complete. You can also use the E/RDY bit in the Status Register to determine the status of the operation.