Datasheets
AT45DB021B-RI by:

Flash, 256KX8, PDSO28

Part Details for AT45DB021B-RI by Microchip Technology Inc

Results Overview of AT45DB021B-RI by Microchip Technology Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

AT45DB021B-RI Information

AT45DB021B-RI by Microchip Technology Inc is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Part Details for AT45DB021B-RI

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AT45DB021B-RI Part Data Attributes

AT45DB021B-RI Microchip Technology Inc
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AT45DB021B-RI Microchip Technology Inc Flash, 256KX8, PDSO28
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description SOIC-28
Reach Compliance Code unknown
Samacsys Manufacturer Microchip
Additional Feature ORGANIZED AS 1024 PAGES OF 264 BYTES EACH
Clock Frequency-Max (fCLK) 20 MHz
Endurance 100000 Write/Erase Cycles
JESD-30 Code R-PDSO-G28
Length 18.25 mm
Memory Density 2097152 bit
Memory IC Type FLASH
Memory Width 8
Number of Functions 1
Number of Terminals 28
Number of Words 262144 words
Number of Words Code 256000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 256KX8
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code SOP
Package Equivalence Code SOP28,.4
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Parallel/Serial SERIAL
Programming Voltage 3.3 V
Seated Height-Max 2.79 mm
Serial Bus Type SPI
Standby Current-Max 0.00001 A
Supply Current-Max 0.035 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Form GULL WING
Terminal Pitch 1.27 mm
Terminal Position DUAL
Type NOR TYPE
Width 8.69 mm
Write Protection HARDWARE

AT45DB021B-RI Related Parts

AT45DB021B-RI Frequently Asked Questions (FAQ)

  • The AT45DB021B-RI has a minimum of 100,000 erase cycles per sector, and a total of 2,000,000 erase cycles for the entire device.

  • To handle page write buffer underrun or overrun errors, you should check the status register for errors after each write operation. If an error occurs, you can retry the write operation or reset the device.

  • After power-up, the device should be reset by pulling the Reset pin low for at least 10 ns. Then, the device should be initialized by sending a series of commands to set the buffer size, sector protection, and other configuration options.

  • The optimal buffer size depends on the specific requirements of your application. A larger buffer size can improve performance, but it also increases the risk of data loss in case of a power failure. A good starting point is to use the default buffer size of 528 bytes and adjust as needed based on your application's requirements.

  • The main difference between the two devices is the operating voltage range. The AT45DB021B-RI operates from 2.7V to 3.6V, while the AT45DB021D-RI operates from 1.8V to 3.6V. The -RI suffix indicates that the device is in a SOIC package.

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