Part Details for AT25SF321-SHD-T by Renesas Electronics Corporation
Results Overview of AT25SF321-SHD-T by Renesas Electronics Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AT25SF321-SHD-T Information
AT25SF321-SHD-T by Renesas Electronics Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for AT25SF321-SHD-T
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AT25SF321-SHD-T
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Avnet Silica | 8SOICW IND TEMP 25V TR (Alt: AT25SF321-SHD-T) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 112 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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Vyrian | Memory ICs | 393 |
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RFQ |
Part Details for AT25SF321-SHD-T
AT25SF321-SHD-T CAD Models
AT25SF321-SHD-T Part Data Attributes
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AT25SF321-SHD-T
Renesas Electronics Corporation
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Datasheet
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AT25SF321-SHD-T
Renesas Electronics Corporation
32Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-IO Support, SOIC-W, 2000/Tape & Reel
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
| Part Package Code | SOIC-W | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Renesas Electronics | |
| Clock Frequency-Max (fCLK) | 85 MHz | |
| Data Retention Time-Min | 20 | |
| Endurance | 100000 Write/Erase Cycles | |
| JESD-30 Code | R-PDSO-G8 | |
| Length | 5.29 mm | |
| Memory Density | 33554432 bit | |
| Memory IC Type | FLASH | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Functions | 1 | |
| Number of Terminals | 8 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | SOP | |
| Package Equivalence Code | SOP8,.3 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Parallel/Serial | SERIAL | |
| Programming Voltage | 3 V | |
| Seated Height-Max | 2.16 mm | |
| Serial Bus Type | QSPI | |
| Standby Current-Max | 0.000025 A | |
| Supply Current-Max | 0.016 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 2.5 V | |
| Supply Voltage-Nom (Vsup) | 3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 1.27 mm | |
| Terminal Position | DUAL | |
| Type | NOR TYPE | |
| Width | 5.24 mm | |
| Write Protection | HARDWARE/SOFTWARE |
AT25SF321-SHD-T Frequently Asked Questions (FAQ)
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The AT25SF321-SHD-T has a minimum of 100,000 erase cycles, but the actual number of cycles may vary depending on the usage and operating conditions.
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The hold pin (HOLD#) should be pulled high during power-up and power-down to prevent any unwanted writes or erases. It's recommended to connect a pull-up resistor to VCC and a capacitor to ground to ensure a clean signal.
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The recommended clock frequency for the SPI interface is up to 50 MHz, but it can operate at frequencies up to 100 MHz with some limitations. It's essential to check the datasheet for specific frequency-related limitations.
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The WP# pin is used to prevent writes to the status register. When WP# is low, the status register is write-protected. When WP# is high, the status register can be written. It's recommended to tie WP# to VCC or use a pull-up resistor to ensure the status register is not accidentally written.
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The Deep Power-Down (DPD) mode is used to reduce power consumption when the device is not in use. In DPD mode, the device consumes very low power (typically <1 μA) and can be used to extend battery life in battery-powered applications.