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8Mbit 2.7V Minimum SPI Serial Flash Memory, DFN, 570/Tray
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AT25DF081A-MH-Y by Renesas Electronics Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2988529
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Farnell | FLASH MEMORY, 8MBIT, -40 TO 85DEG C RoHS: Compliant Min Qty: 1 Lead time: 19 Weeks, 1 Days Container: Each | 380 |
|
$1.6061 / $2.1325 | Buy Now |
DISTI #
AT25DF081A-MH-Y
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Avnet Silica | Flash SerialSPI 33V 8Mbit 1M x 8bit 8Pin UDFN EP Bulk (Alt: AT25DF081A-MH-Y) RoHS: Compliant Min Qty: 2850 Package Multiple: 570 Lead time: 19 Weeks, 0 Days | Silica - 0 |
|
Buy Now |
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AT25DF081A-MH-Y
Renesas Electronics Corporation
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Datasheet
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AT25DF081A-MH-Y
Renesas Electronics Corporation
8Mbit 2.7V Minimum SPI Serial Flash Memory, DFN, 570/Tray
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | DFN | |
Package Description | UDFN-8 | |
Reach Compliance Code | compliant | |
Samacsys Manufacturer | Renesas Electronics | |
Clock Frequency-Max (fCLK) | 85 MHz | |
Data Retention Time-Min | 20 | |
Endurance | 100000 Write/Erase Cycles | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e4 | |
Length | 6 mm | |
Memory Density | 8388608 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Moisture Sensitivity Level | 1 | |
Number of Functions | 1 | |
Number of Terminals | 8 | |
Number of Words | 1048576 words | |
Number of Words Code | 1000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 1MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | HVSON | |
Package Equivalence Code | SOLCC8,.25 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | |
Parallel/Serial | SERIAL | |
Programming Voltage | 3 V | |
Qualification Status | Not Qualified | |
Seated Height-Max | 0.6 mm | |
Serial Bus Type | SPI | |
Standby Current-Max | 0.00001 A | |
Supply Current-Max | 0.02 mA | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 2.7 V | |
Supply Voltage-Nom (Vsup) | 3 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | NO LEAD | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Type | NOR TYPE | |
Width | 5 mm | |
Write Protection | HARDWARE/SOFTWARE |
This table gives cross-reference parts and alternative options found for AT25DF081A-MH-Y. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AT25DF081A-MH-Y, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
AT25DF081A-MH-T | Adesto Technologies Corporation | Check for Price | Flash, 8MX1, PDSO8, UDFN-8 | AT25DF081A-MH-Y vs AT25DF081A-MH-T |
AT25DF081A-MH-Y | Adesto Technologies Corporation | Check for Price | Flash, 8MX1, PDSO8, UDFN-8 | AT25DF081A-MH-Y vs AT25DF081A-MH-Y |
AT25DF081A-MH-T | Dialog Semiconductor GmbH | Check for Price | Flash, 8MX1, PDSO8, | AT25DF081A-MH-Y vs AT25DF081A-MH-T |
AT25DF081A-MH-Y | Atmel Corporation | Check for Price | Flash, 8MX1, PDSO8, 5 X 6 MM, 0.60 MM HEIGHT, GREEN, PLASTIC, MO-229, UDFN-8 | AT25DF081A-MH-Y vs AT25DF081A-MH-Y |
The AT25DF081A-MH-Y has a maximum of 100,000 erase cycles per sector, and 10,000 erase cycles per block.
To handle page write buffer underrun errors, ensure that the page write buffer is fully loaded with data before initiating the write operation. Also, use the status register to check for errors and retry the write operation if necessary.
The recommended power-up sequence is to apply VCC first, followed by VSS, and then the clock signal. This ensures that the device powers up correctly and minimizes the risk of latch-up or other power-related issues.
Yes, the AT25DF081A-MH-Y is compatible with 3.3V power supplies. However, ensure that the input signals are within the recommended voltage range of 2.7V to 3.6V to ensure reliable operation.
Wear leveling can be implemented using software algorithms that distribute write operations evenly across the device. This can be done by tracking the number of erase cycles per sector or block and redirecting write operations to less-used areas of the device.