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1 Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory with Dual Read Support, SOIC-N, 4000/Tape & Reel
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AT25DF011-SSHN-T by Renesas Electronics Corporation is a Flash Memory.
Flash Memories are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1265-1117-1-ND
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DigiKey | IC FLASH 1MBIT SPI 104MHZ 8SOIC Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.4560 / $0.6400 | Buy Now |
DISTI #
AT25DF011-SSHN-T
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Avnet Americas | - Tape and Reel (Alt: AT25DF011-SSHN-T) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 18 Weeks, 0 Days Container: Reel | 0 |
|
$0.6200 | Buy Now |
DISTI #
988-AT25DF011-SSHN-T
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Mouser Electronics | NOR Flash 1 Mbit, Wide Vcc (1.7V to 3.6V), -40C to 85C, SOIC-N 150mil (Tape & Reel), Single, Dual SPI NOR flash RoHS: Compliant | 1912 |
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$0.4560 / $0.7300 | Buy Now |
DISTI #
AT25DF011-SSHN-T
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Avnet Asia | Flash Memory serial (Alt: AT25DF011-SSHN-T) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days | 0 |
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$0.3647 / $0.4079 | Buy Now |
DISTI #
AT25DF011-SSHN-T
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Avnet Silica | (Alt: AT25DF011-SSHN-T) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 19 Weeks, 0 Days | Silica - 0 |
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Buy Now |
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AT25DF011-SSHN-T
Renesas Electronics Corporation
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Datasheet
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AT25DF011-SSHN-T
Renesas Electronics Corporation
1 Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory with Dual Read Support, SOIC-N, 4000/Tape & Reel
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | SOIC-N | |
Package Description | SOIC-8 | |
Reach Compliance Code | compliant | |
Factory Lead Time | 18 Weeks | |
Samacsys Manufacturer | Renesas Electronics | |
Clock Frequency-Max (fCLK) | 104 MHz | |
Data Retention Time-Min | 20 | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Length | 4.925 mm | |
Memory Density | 1048576 bit | |
Memory IC Type | FLASH | |
Memory Width | 8 | |
Moisture Sensitivity Level | 1 | |
Number of Functions | 1 | |
Number of Terminals | 8 | |
Number of Words | 131072 words | |
Number of Words Code | 128000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 128KX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | SOP | |
Package Equivalence Code | SOP8,.25 | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Parallel/Serial | SERIAL | |
Programming Voltage | 1.8 V | |
Seated Height-Max | 1.75 mm | |
Supply Voltage-Max (Vsup) | 3.6 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Pitch | 1.27 mm | |
Terminal Position | DUAL | |
Type | NOR TYPE | |
Width | 3.9 mm |
This table gives cross-reference parts and alternative options found for AT25DF011-SSHN-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AT25DF011-SSHN-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
AT25DF011-SSHN-B | Dialog Semiconductor GmbH | Check for Price | Flash, 1MX1, PDSO8, | AT25DF011-SSHN-T vs AT25DF011-SSHN-B |
The AT25DF011-SSHN-T has a maximum of 100,000 erase cycles per sector, and 10,000 erase cycles per device.
The AT25DF011-SSHN-T has a 256-byte page write buffer. If the buffer overflows, the device will automatically start a new page write cycle, and the excess data will be written to the next page.
The recommended power-up sequence is to apply VCC first, followed by the clock signal (SCK), and then the chip select signal (CS). This ensures proper device initialization and prevents unwanted writes or erases.
Yes, the AT25DF011-SSHN-T can be used in a multi-master SPI bus configuration. However, it's essential to ensure that only one master device is active at a time to prevent data corruption or bus conflicts.
The AT25DF011-SSHN-T has a software-controlled write protection feature. By setting the write protection bits in the status register, the device can be protected against accidental writes or erases.