Part Details for AS4C4M32S-6BIN by Alliance Memory Inc
Results Overview of AS4C4M32S-6BIN by Alliance Memory Inc
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AS4C4M32S-6BIN Information
AS4C4M32S-6BIN by Alliance Memory Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for AS4C4M32S-6BIN
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AK7029
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Newark | Sdr, 128Mb, 4M X 32, 3.3V, 90-Ball Bga, 166 Mhz, Industrial Temp |Alliance Memory AS4C4M32S-6BIN RoHS: Not Compliant Min Qty: 190 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$5.2500 / $6.5600 | Buy Now |
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DISTI #
1450-1156-ND
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DigiKey | IC DRAM 128MBIT PAR 90TFBGA Min Qty: 1 Lead time: 20 Weeks Container: Tray |
9528 In Stock |
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$3.8302 / $4.8600 | Buy Now |
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DISTI #
AS4C4M32S-6BIN
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Avnet Americas | DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 90-Pin TF-BGA - Trays (Alt: AS4C4M32S-6BIN) RoHS: Not Compliant Min Qty: 190 Package Multiple: 190 Lead time: 20 Weeks, 0 Days Container: Tray | 1917 Factory Stock |
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$3.4848 / $3.7515 | Buy Now |
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DISTI #
913-AS4C4M32S-6BIN
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Mouser Electronics | DRAM SDRAM, 128Mb, 4M x 32, 3.3V, 90-ball BGA, 166 MHz, Industrial Temp - Tray RoHS: Compliant | 623 |
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$3.8100 / $4.5800 | Buy Now |
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DISTI #
AS4C4M32S-6BIN
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IBS Electronics | AS4C2M32 SERIES 128-MBIT (4 M X 32) 3.3V 166MHZ INDUSTRIAL SDRAM - TFBGA-90 Min Qty: 190 Package Multiple: 1 | 180 |
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$4.7450 / $4.9010 | Buy Now |
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Karl Kruse GmbH & Co KG | SDR 128Mb 4M x 32 3.3V 90-ball BGA 166 MHz Industrial Temp | 11200 |
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RFQ | |
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DISTI #
AS4C4M32S-6BIN
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Avnet Silica | DRAM Chip SDRAM 128MBit 4Mx32 33V 90Pin TFBGA (Alt: AS4C4M32S-6BIN) RoHS: Compliant Min Qty: 190 Package Multiple: 190 Lead time: 21 Weeks, 0 Days | Silica - 2280 |
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Buy Now |
Part Details for AS4C4M32S-6BIN
AS4C4M32S-6BIN CAD Models
AS4C4M32S-6BIN Part Data Attributes
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AS4C4M32S-6BIN
Alliance Memory Inc
Buy Now
Datasheet
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AS4C4M32S-6BIN
Alliance Memory Inc
Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90, 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ALLIANCE MEMORY INC | |
| Package Description | 8 X 13 MM, 1.20 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, TFBGA-90 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.02 | |
| Factory Lead Time | 20 Weeks | |
| Samacsys Manufacturer | Alliance Memory | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 5.4 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 166 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 1,2,4,8 | |
| JESD-30 Code | R-PBGA-B90 | |
| Length | 13 mm | |
| Memory Density | 134217728 bit | |
| Memory IC Type | SYNCHRONOUS DRAM | |
| Memory Width | 32 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 90 | |
| Number of Words | 4194304 words | |
| Number of Words Code | 4000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 85 °C | |
| Operating Temperature-Min | -40 °C | |
| Organization | 4MX32 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TFBGA | |
| Package Equivalence Code | BGA90,9X15,32 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
| Qualification Status | Not Qualified | |
| Refresh Cycles | 4096 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 1,2,4,8,FP | |
| Standby Current-Max | 0.003 A | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 3.6 V | |
| Supply Voltage-Min (Vsup) | 3 V | |
| Supply Voltage-Nom (Vsup) | 3.3 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | INDUSTRIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 0.8 mm | |
| Terminal Position | BOTTOM | |
| Width | 8 mm |
AS4C4M32S-6BIN Frequently Asked Questions (FAQ)
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The AS4C4M32S-6BIN has an operating temperature range of 0°C to 70°C, with an extended temperature range of -40°C to 85°C available for industrial grade devices.
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The SDRAM requires a power-on reset sequence, which involves applying a clock signal, then asserting the chip select (CS) and clock enable (CKE) signals low, followed by a delay, and then asserting CS and CKE high. The exact sequence and timing can be found in the datasheet.
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The AS4C4M32S-6BIN supports a maximum clock frequency of 166 MHz, with a corresponding data transfer rate of 1333 MB/s.
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The AS4C4M32S-6BIN requires periodic refresh cycles to maintain data integrity. The refresh interval is typically 64 ms, and the refresh command should be issued every 15.6 μs (tREFI) to ensure data retention.
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The AS4C4M32S-6BIN has a latency of 6 clock cycles (CL6) for read and write operations, which means that the data will be available 6 clock cycles after the read or write command is issued.