Part Details for AS4C32M8D1-5TCN by Alliance Memory Inc
Results Overview of AS4C32M8D1-5TCN by Alliance Memory Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AS4C32M8D1-5TCN Information
AS4C32M8D1-5TCN by Alliance Memory Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for AS4C32M8D1-5TCN
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DISTI #
AS4C32M8D1-5TCN
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Avnet Silica | DRAM Chip DDR SDRAM 256MBit 32M x 8 25V 66Pin TSOPII (Alt: AS4C32M8D1-5TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Part Details for AS4C32M8D1-5TCN
AS4C32M8D1-5TCN CAD Models
AS4C32M8D1-5TCN Part Data Attributes
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AS4C32M8D1-5TCN
Alliance Memory Inc
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Datasheet
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AS4C32M8D1-5TCN
Alliance Memory Inc
DDR DRAM, 32MX8, 0.7ns, CMOS, PDSO66, TSOPII-66
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ALLIANCE MEMORY INC | |
| Package Description | TSOPII-66 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8542.32.00.24 | |
| Access Mode | FOUR BANK PAGE BURST | |
| Access Time-Max | 0.7 ns | |
| Additional Feature | AUTO/SELF REFRESH | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| Interleaved Burst Length | 2,4,8 | |
| JESD-30 Code | R-PDSO-G66 | |
| Length | 22.22 mm | |
| Memory Density | 268435456 bit | |
| Memory IC Type | DDR1 DRAM | |
| Memory Width | 8 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Ports | 1 | |
| Number of Terminals | 66 | |
| Number of Words | 33554432 words | |
| Number of Words Code | 32000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 32MX8 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | TSOP2 | |
| Package Equivalence Code | TSSOP66,.46 | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE, THIN PROFILE | |
| Refresh Cycles | 8192 | |
| Seated Height-Max | 1.2 mm | |
| Self Refresh | YES | |
| Sequential Burst Length | 2,4,8 | |
| Standby Current-Max | 0.008 A | |
| Standby Voltage-Min | 2.3 V | |
| Supply Current-Max | 0.2 mA | |
| Supply Voltage-Max (Vsup) | 2.7 V | |
| Supply Voltage-Min (Vsup) | 2.3 V | |
| Supply Voltage-Nom (Vsup) | 2.5 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | GULL WING | |
| Terminal Pitch | 0.65 mm | |
| Terminal Position | DUAL | |
| Width | 10.16 mm |
AS4C32M8D1-5TCN Frequently Asked Questions (FAQ)
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The AS4C32M8D1-5TCN has an industrial temperature range of -40°C to 85°C, making it suitable for use in a wide range of applications.
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The SDRAM requires a power-on reset sequence, which involves applying a clock signal, then asserting the chip select (CS) and clock enable (CKE) signals low, followed by a delay of at least 200us. After this, the SDRAM is ready to receive commands.
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The AS4C32M8D1-5TCN supports clock frequencies up to 166MHz, making it suitable for high-speed applications.
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The SDRAM requires periodic refresh cycles to maintain data integrity. The refresh interval is typically 64ms, and the refresh command should be issued every 64ms to ensure data retention.
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The AS4C32M8D1-5TCN has a latency of 5 clock cycles (CL5), which means that it takes 5 clock cycles for the SDRAM to respond to a read or write command.