Part Details for AS4C256M8D2-25BCNTR by Alliance Memory Inc
Results Overview of AS4C256M8D2-25BCNTR by Alliance Memory Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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AS4C256M8D2-25BCNTR Information
AS4C256M8D2-25BCNTR by Alliance Memory Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Price & Stock for AS4C256M8D2-25BCNTR
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
AS4C256M8D2-25BCNTR-ND
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DigiKey | IC DRAM 2GBIT PARALLEL 60FBGA Min Qty: 2500 Lead time: 16 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$11.1305 | Buy Now |
DISTI #
AS4C256M8D2-25BCNT
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Avnet Americas | DRAM Chip DDR2 SDRAM 2Gbit 256M x 8 60-Pin FBGA T/R - Tape and Reel (Alt: AS4C256M8D2-25BCNT) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 111 Weeks, 0 Days Container: Reel | 0 |
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RFQ |
Part Details for AS4C256M8D2-25BCNTR
AS4C256M8D2-25BCNTR CAD Models
AS4C256M8D2-25BCNTR Part Data Attributes
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AS4C256M8D2-25BCNTR
Alliance Memory Inc
Buy Now
Datasheet
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AS4C256M8D2-25BCNTR
Alliance Memory Inc
IC SDRAM 2GBIT 400MHZ 60BGA
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALLIANCE MEMORY INC | |
Package Description | FBGA-60 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Factory Lead Time | 111 Weeks | |
Access Mode | MULTI BANK PAGE BURST | |
Access Time-Max | 0.4 ns | |
Additional Feature | AUTO/SELF REFRESH | |
Clock Frequency-Max (fCLK) | 400 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B60 | |
Length | 13 mm | |
Memory Density | 2147483648 bit | |
Memory IC Type | DDR2 DRAM | |
Memory Width | 8 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 60 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | ||
Organization | 256MX8 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA60,9X11,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.03 A | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.51 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | OTHER | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Width | 10.5 mm |