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DRAM,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
AS4C256M16D3C-12BIN by Alliance Memory Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.
Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
82AK3794
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Newark | Dram, 800Mhz, 4Gbit, Fbga-96, Dram Type:Ddr3, Memory Configuration:256M X 16Bit, Clock Frequency Max:800Mhz, Ic Case/Package:Fbga, No. Of Pins:96Pins, Supply Voltage Nom:1.5V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C256M16D3C-12BIN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 209 |
|
$6.9500 | Buy Now |
DISTI #
1450-AS4C256M16D3C-12BIN-ND
|
DigiKey | IC DRAM 4GBIT PARALLEL 96FBGA Min Qty: 1 Lead time: 6 Weeks Container: Tray |
9316 In Stock |
|
$8.7591 / $11.1500 | Buy Now |
DISTI #
AS4C256M16D3C-12BIN
|
Avnet Americas | DRAM, DDR3, 4 Gbit, 256M x 16bit, 800 MHz, 96-Pin, FBGA - Trays (Alt: AS4C256M16D3C-12BIN) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 6 Weeks, 0 Days Container: Tray | 6595 Factory Stock |
|
$6.6720 / $7.2570 | Buy Now |
DISTI #
913-4C256M16D312BIN
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Mouser Electronics | DRAM DDR3, 4G, 256M x 16, 1.5V, 96-ball FBGA, 800MHz, Industrial Temp - Tray RoHS: Compliant | 769 |
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$7.3700 / $8.4600 | Buy Now |
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Karl Kruse GmbH & Co KG | DDR3 4G 256M x 16 1.5V 96-ball FBGA 800MHz Industrial Temp | 25066 |
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RFQ | |
DISTI #
AS4C256M16D3C-12BIN
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Avnet Silica | DRAM DDR3 4 Gbit 256M x 16bit 800 MHz 96Pin FBGA (Alt: AS4C256M16D3C-12BIN) RoHS: Compliant Min Qty: 209 Package Multiple: 209 Lead time: 7 Weeks, 0 Days | Silica - 418 |
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Buy Now | |
|
LCSC | FBGA-96(7.5x13.5) DDR SDRAM ROHS | 50 |
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$10.5533 / $12.9672 | Buy Now |
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AS4C256M16D3C-12BIN
Alliance Memory Inc
Buy Now
Datasheet
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Compare Parts:
AS4C256M16D3C-12BIN
Alliance Memory Inc
DRAM,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ALLIANCE MEMORY INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8542.32.00.36 | |
Factory Lead Time | 6 Weeks | |
Date Of Intro | 2020-03-26 | |
Samacsys Manufacturer | Alliance Memory | |
Access Mode | MULTI BANK PAGE BURST | |
Clock Frequency-Max (fCLK) | 800 MHz | |
I/O Type | COMMON | |
Interleaved Burst Length | 4,8 | |
JESD-30 Code | R-PBGA-B96 | |
JESD-609 Code | e1 | |
Length | 13.5 mm | |
Memory Density | 4294967296 bit | |
Memory IC Type | DDR3 DRAM | |
Memory Width | 16 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Ports | 1 | |
Number of Terminals | 96 | |
Number of Words | 268435456 words | |
Number of Words Code | 256000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 95 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 256MX16 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | TFBGA | |
Package Equivalence Code | BGA96,9X16,32 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, THIN PROFILE, FINE PITCH | |
Peak Reflow Temperature (Cel) | 260 | |
Refresh Cycles | 8192 | |
Seated Height-Max | 1.2 mm | |
Self Refresh | YES | |
Sequential Burst Length | 4,8 | |
Standby Current-Max | 0.008 A | |
Standby Voltage-Min | 1.425 V | |
Supply Current-Max | 0.19 mA | |
Supply Voltage-Max (Vsup) | 1.575 V | |
Supply Voltage-Min (Vsup) | 1.425 V | |
Supply Voltage-Nom (Vsup) | 1.5 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | BALL | |
Terminal Pitch | 0.8 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Width | 7.5 mm |
The maximum operating temperature range for the AS4C256M16D3C-12BIN is 0°C to 85°C.
The AS4C256M16D3C-12BIN requires a refresh cycle every 64ms, with a minimum of 4096 refreshes within an 64ms interval.
The AS4C256M16D3C-12BIN supports a maximum clock frequency of 133MHz.
After power-up, the SDRAM must be initialized by sending a series of commands, including a PRECHARGE ALL command, an AUTOREFRESH command, and a MODE REGISTER SET command.
The AS4C256M16D3C-12BIN has a latency of 3 clock cycles (CL3).