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Memory / DRAMs / AS4C16M16SA-7TCN
Datasheets
AS4C16M16SA-7TCN by: Alliance Memory Inc

Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54

Part Details for AS4C16M16SA-7TCN by Alliance Memory Inc

Results Overview of AS4C16M16SA-7TCN by Alliance Memory Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Computing and Data Storage

AS4C16M16SA-7TCN Information

AS4C16M16SA-7TCN by Alliance Memory Inc is a DRAM.
DRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for AS4C16M16SA-7TCN

Part # Distributor Description Stock Price Buy
DISTI # 82AK3787
Newark Dram, 143Mhz, 256Mbit, Tsop-Ii-54, Dram Type:Sdram, Memory Configuration:16M X 16Bit, Clock Frequency Max:143Mhz, Ic Case/Package:Tsop-Ii, No. Of Pins:54Pins, Supply Voltage Nom:3.3V, Ic Mounting:Surface Mount, Product Range:- Rohs Compliant: Yes |Alliance Memory AS4C16M16SA-7TCN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 98
  • 1 $2.3600
  • 10 $2.3600
  • 25 $2.3600
  • 50 $2.3600
  • 100 $2.3600
  • 250 $2.3600
  • 500 $2.3600
$2.3600 Buy Now
DISTI # 1450-1255-ND
DigiKey IC DRAM 256MBIT PAR 54TSOP II Min Qty: 1 Lead time: 8 Weeks Container: Tray 17775
In Stock
  • 1 $3.9200
  • 10 $3.6540
  • 25 $3.5456
  • 50 $3.4636
  • 108 $3.3724
  • 324 $3.2433
  • 540 $3.1839
  • 1,080 $3.1042
$3.1042 / $3.9200 Buy Now
DISTI # AS4C16M16SA-7TCN
Avnet Americas SDRAM 256M (16M X 16 - Trays (Alt: AS4C16M16SA-7TCN) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tray 108
120289 Factory Stock
  • 1 $2.4600
  • 10 $2.4000
  • 30 $2.3400
  • 50 $2.2800
  • 100 $2.2656
$2.2656 / $2.4600 Buy Now
DISTI # 913-4C16M16SA-7TCN
Mouser Electronics DRAM SDRAM, 256M, 16M x 16, 3.3V, 54pin TSOP II, 143Mhz, Commerical Temp - Tray RoHS: Compliant 7300
  • 1 $3.9200
  • 10 $3.6500
  • 25 $3.4900
  • 108 $3.3700
  • 216 $3.2300
  • 540 $3.1100
$3.1100 / $3.9200 Buy Now
Future Electronics AS4C16x Series 256 Mbit (16 M x 16) 3.3 V 143 MHz Synchronous DRAM - TSOP II-54 RoHS: Compliant pbFree: Yes Min Qty: 108 Package Multiple: 108 Lead time: 10 Weeks Container: Tray 108
Tray
  • 108 $2.4700
  • 216 $2.4500
  • 432 $2.4300
  • 540 $2.4200
  • 1,620 $2.3800
$2.3800 / $2.4700 Buy Now
Quest Components   95
  • 1 $5.6400
  • 8 $2.8200
  • 72 $2.6320
$2.6320 / $5.6400 Buy Now
Future Electronics AS4C16x Series 256 Mbit (16 M x 16) 3.3 V 143 MHz Synchronous DRAM - TSOP II-54 Min Qty: 108 Package Multiple: 108 108
null
  • 108 $2.4700
  • 216 $2.4500
  • 432 $2.4300
  • 540 $2.4200
  • 1,620 $2.3800
$2.3800 / $2.4700 Buy Now
DISTI # AS4C16M16SA-7TCN
TME IC: DRAM memory, 256MbDRAM, 16Mx16bit, 3.3V, 143MHz, 5.4ns, 0÷70°C Min Qty: 1 776
  • 1 $4.6200
  • 5 $4.3700
  • 25 $3.6800
  • 108 $2.8800
$2.8800 / $4.6200 Buy Now
DISTI # AS4C16M16SA-7TCN
IBS Electronics AS4C16X SERIES 256 MBIT (16 M X 16) 3.3 V 143 MHZ SYNCHRONOUS DRAM - TSOP II-54 Min Qty: 108 Package Multiple: 1 108
  • 108 $3.2110
  • 216 $3.1850
  • 432 $3.1590
  • 540 $3.1460
  • 1,620 $3.0940
$3.0940 / $3.2110 Buy Now
Karl Kruse GmbH & Co KG SDR 256M 16M x 16 3.3V 54pin TSOP II 143Mhz Commerical Temp(.63) 120289
RFQ
DISTI # ICDRAM1729
Rutronik SDRAM 256Mb 16Mx16 143MHz TSOP RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Tray Stock DE - 3184
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 108 $3.7100
  • 216 $3.0100
  • 324 $2.8900
  • 540 $2.8500
  • 648 $2.8000
$2.8000 / $3.7100 Buy Now
DISTI # AS4C16M16SA-7TCN
Avnet Asia SDRAM 256M (16M X 16 (Alt: AS4C16M16SA-7TCN) RoHS: Compliant Min Qty: 1080 Package Multiple: 108 Lead time: 8 Weeks, 0 Days 0
RFQ
DISTI # AS4C16M16SA-7TCN
Avnet Silica SDRAM 256M 16M X 16 (Alt: AS4C16M16SA-7TCN) RoHS: Compliant Min Qty: 108 Package Multiple: 108 Lead time: 9 Weeks, 0 Days Silica - 540
Buy Now
LCSC TSOP-54-10.2mm SDRAM ROHS 4
  • 1 $5.4208
  • 10 $4.6800
  • 30 $4.2274
  • 100 $3.8487
$3.8487 / $5.4208 Buy Now
New Advantage Corporation AS4C16x Series 256 Mbit (16 M x 16) 3.3 V 143 MHz Synchronous DRAM - TSOP II-54 RoHS: Compliant Min Qty: 1 Package Multiple: 108 216
  • 108 $4.1200
  • 216 $3.8000
$3.8000 / $4.1200 Buy Now
Win Source Electronics IC DRAM 256MBIT PAR 54TSOP II 3183
  • 8 $8.2050
  • 18 $6.7324
  • 27 $6.5220
  • 37 $6.3116
  • 48 $6.1012
  • 64 $5.4701
$5.4701 / $8.2050 Buy Now

Part Details for AS4C16M16SA-7TCN

AS4C16M16SA-7TCN CAD Models

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AS4C16M16SA-7TCN Part Data Attributes

Parametric Data
AS4C16M16SA-7TCN Alliance Memory Inc
Buy Now Datasheet
Compare Parts:
AS4C16M16SA-7TCN Alliance Memory Inc Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ALLIANCE MEMORY INC
Package Description TSOP2-54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.24
Factory Lead Time 8 Weeks
Samacsys Manufacturer Alliance Memory
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e3
Length 22.22 mm
Memory Density 268435456 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 16777216 words
Number of Words Code 16000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 16MX16
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.02 A
Standby Voltage-Min 3 V
Supply Current-Max 0.055 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN
Terminal Form GULL WING
Terminal Pitch 0.8 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for AS4C16M16SA-7TCN

This table gives cross-reference parts and alternative options found for AS4C16M16SA-7TCN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of AS4C16M16SA-7TCN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
M12L2561616A-7TG2K Elite Semiconductor Memory Technology Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 AS4C16M16SA-7TCN vs M12L2561616A-7TG2K
M12L2561616A-7TIG2A Elite Semiconductor Memory Technology Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 AS4C16M16SA-7TCN vs M12L2561616A-7TIG2A
M12L2561616A-7TIG2S Elite Semiconductor Memory Technology Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 AS4C16M16SA-7TCN vs M12L2561616A-7TIG2S
Part Number Manufacturer Composite Price Description Compare
AS4C16M16SA-6TIN Alliance Memory Inc $3.6332 Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 AS4C16M16SA-7TCN vs AS4C16M16SA-6TIN
M12L2561616A-6TIG2S Elite Semiconductor Memory Technology Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, ROHS COMPLIANT, TSOP2-54 AS4C16M16SA-7TCN vs M12L2561616A-6TIG2S
K4S561632C-TI7C Samsung Semiconductor Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 AS4C16M16SA-7TCN vs K4S561632C-TI7C
K4S561632C-TE75 Samsung Semiconductor Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54 AS4C16M16SA-7TCN vs K4S561632C-TE75
V54C3256164VGLI-6PC ProMOS Technologies Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSSOP2-54 AS4C16M16SA-7TCN vs V54C3256164VGLI-6PC
V54C3256164VDUI7I ProMOS Technologies Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 AS4C16M16SA-7TCN vs V54C3256164VDUI7I
HYB39S256160FEL-6 Qimonda AG Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 AS4C16M16SA-7TCN vs HYB39S256160FEL-6
AS4C16M16S-6TINTR Alliance Memory Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, TSOP2-54 AS4C16M16SA-7TCN vs AS4C16M16S-6TINTR
V54C3256164VHLI6I ProMOS Technologies Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, GREEN, PLASTIC, TSOP2-54 AS4C16M16SA-7TCN vs V54C3256164VHLI6I
IS42S16160C-7TLI Integrated Silicon Solution Inc Check for Price Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-54 AS4C16M16SA-7TCN vs IS42S16160C-7TLI

AS4C16M16SA-7TCN Related Parts

AS4C16M16SA-7TCN Frequently Asked Questions (FAQ)

  • The AS4C16M16SA-7TCN has an operating temperature range of 0°C to 70°C.

  • The AS4C16M16SA-7TCN requires a refresh cycle every 64ms, with a minimum of 4096 refreshes within an 64ms interval.

  • The AS4C16M16SA-7TCN has a latency of 7 clock cycles (CL7).

  • The AS4C16M16SA-7TCN is designed to operate at a voltage supply of 3.3V ± 0.3V. Operating at a different voltage supply may affect its performance and reliability.

  • The AS4C16M16SA-7TCN requires a power-up sequence of VDD, VDDQ, and then clock signal. For power-down, the clock signal should be stopped, followed by VDDQ, and then VDD.

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